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NSVBC858CLT1G The NSVBC858CLT1G is a PNP bipolar transistor from ON Semiconductor. It features a 30V collector-emitter voltage and 100mA continuous current in a SOT-23-3 package.
Mfr Part #:

NSVBC858CLT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVBC858CLT1G is a PNP bipolar transistor from ON Semiconductor. It features a 30V collector-emitter voltage and 100mA continuous current in a SOT-23-3 package.
✓ Total Stock: 1,500 pcs
$ Price Range: $0.99

NSVBC858CLT1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
500 pcs
On Request
500 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NSVBC858CLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSVBC858CLT1G Description

Short technical summary and product information.

The NSVBC858CLT1G is a PNP silicon bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for general-purpose applications and features a maximum collector-emitter voltage of 30V and a continuous collector current of 100mA.

 

This transistor offers a DC current gain (hFE) of 420 at 2mA and 5V, with a Vce saturation of 650mV at 5mA and 100mA. It operates at frequencies up to 100MHz.

 

The device is housed in a SOT-23-3 (TO-236) surface-mount package, making it suitable for compact electronic designs. Thermal characteristics include a total power dissipation of up to 300mW on an alumina substrate or 225mW on an FR-5 board at 25°C. The operating temperature range is from -55°C to +150°C.

 

The NSVBC858CLT1G is Pb-free and Halogen-free, and its RoHS3 status is compliant. The Moisture Sensitivity Level (MSL) is 1.

NSVBC858CLT1G Quick Information

Product Type: Bipolar Transistor
Series: NSVBC858CLT1G
Canonical Name: NSVBC858CLT1G PNP Bipolar Transistor
Subcategory: Bipolar Junction Transistor (BJT)

NSVBC858CLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVBC858CLT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVBC858CLT1G Features

  • PNP silicon bipolar junction transistor.
  • 30V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • High DC current gain (hFE) of 420.
  • SOT-23-3 surface-mount package.

NSVBC858CLT1G Applications

  • Used in low-power switching circuits
  • Suitable for signal amplification
  • Ideal for surface-mount electronic designs
  • Applicable in low-voltage applications

NSVBC858CLT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVBC858CLT1G?

The maximum collector-emitter voltage is 30V.

What is the continuous collector current rating?

The continuous collector current is 100mA.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What package type is the NSVBC858CLT1G supplied in?

It is supplied in a SOT-23-3 package.

Is the NSVBC858CLT1G RoHS compliant?

Yes, it is RoHS3 compliant.

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