NSVBC858BLT1G The On Semiconductor NSVBC858BLT1G is a PNP bipolar junction transistor designed for general-purpose applications. It features a 30V collector-emitter breakdown voltage and a 100mA continuous collector current.
Mfr Part #:

NSVBC858BLT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSVBC858BLT1G is a PNP bipolar junction transistor designed for general-purpose applications. It features a 30V collector-emitter breakdown voltage and a 100mA continuous collector current.
Total Stock: 9,000 pcs
$ Price Range: $0.99

NSVBC858BLT1G Available from 1 distributor

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NSVBC858BLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (IC) Max
Collector Current - Continuous
Collector Current - Peak
Collector Cutoff Current (Max)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage
Frequency
Frequency - Transition
Halogen Free
Junction and Storage Temperature
Mounting Type
Operating Temperature
Pb-Free
Power
Power - Max
Supplier Device Package
Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate)
Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board)
Total Device Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Total Device Dissipation (Maximum @ FR -5 Board, TA = 25 °C)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Collector Emitter Breakdown (Max)

NSVBC858BLT1G Description

Short technical summary and product information.

The NSVBC858BLT1G from On Semiconductor is a PNP silicon transistor designed for general-purpose applications. It offers a collector-emitter breakdown voltage of 30V and a continuous collector current of 100mA.

 

Key electrical characteristics include a maximum Vce saturation of 650mV at 5mA/100mA and a minimum DC current gain (hFE) of 220 at 2mA/5V. The transition frequency is rated at 100MHz.

 

This device is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. The operating temperature range is -55°C to 150°C (TJ). It is Pb-Free and Halogen Free, with RoHS compliance noted.

 

Thermal performance includes a maximum power dissipation of 300mW on an alumina substrate and a junction-to-ambient thermal resistance of 417°C/W. The device is also qualified for automotive applications with S and NSV prefixes.

NSVBC858BLT1G Quick Information

Product Type: Transistor
Canonical Name: NSVBC858BLT1G PNP Bipolar Junction Transistor
Subcategory: PNP

NSVBC858BLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVBC858BLT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVBC858BLT1G Features

  • PNP silicon bipolar junction transistor.
  • 30V collector-emitter breakdown voltage.
  • 100mA continuous collector current.
  • SOT-23-3 surface mount package.
  • Wide operating temperature range.

NSVBC858BLT1G Applications

  • Suitable for low-power switching applications.
  • Used in signal amplification circuits.
  • Ideal for automotive and industrial electronics.
  • Applicable in RF transition and high-frequency circuits.

NSVBC858BLT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the NSVBC858BLT1G?

The collector-emitter breakdown voltage is 30 V.

What is the maximum continuous collector current?

The maximum continuous collector current is 100 mA.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What package type is the NSVBC858BLT1G supplied in?

The NSVBC858BLT1G is supplied in a SOT-23-3 (TO-236) package.

Is the NSVBC858BLT1G RoHS compliant?

The NSVBC858BLT1G is RoHS3 Compliant.

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