| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Halogen Free | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSVBC858BLT1G from On Semiconductor is a PNP silicon transistor designed for general-purpose applications. It offers a collector-emitter breakdown voltage of 30V and a continuous collector current of 100mA.
Key electrical characteristics include a maximum Vce saturation of 650mV at 5mA/100mA and a minimum DC current gain (hFE) of 220 at 2mA/5V. The transition frequency is rated at 100MHz.
This device is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. The operating temperature range is -55°C to 150°C (TJ). It is Pb-Free and Halogen Free, with RoHS compliance noted.
Thermal performance includes a maximum power dissipation of 300mW on an alumina substrate and a junction-to-ambient thermal resistance of 417°C/W. The device is also qualified for automotive applications with S and NSV prefixes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 30 V.
The maximum continuous collector current is 100 mA.
The operating temperature range is -55°C to +150°C.
The NSVBC858BLT1G is supplied in a SOT-23-3 (TO-236) package.
The NSVBC858BLT1G is RoHS3 Compliant.