NSVBC857CWT1G-M02 The onsemi NSVBC857CWT1G-M02 is an AEC-Q101 qualified NPN bipolar junction transistor. It features a 45V collector-emitter breakdown voltage and a 100mA maximum collector current.
Mfr Part #:

NSVBC857CWT1G-M02

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The onsemi NSVBC857CWT1G-M02 is an AEC-Q101 qualified NPN bipolar junction transistor. It features a 45V collector-emitter breakdown voltage and a 100mA maximum collector current.
Total Stock: 152,690 pcs
$ Price Range: $0.99

NSVBC857CWT1G-M02 Available from 1 distributor

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NSVBC857CWT1G-M02 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Vce Saturation (Max) @ Ib, Ic
Voltage

NSVBC857CWT1G-M02 Description

Short technical summary and product information.

The onsemi NSVBC857CWT1G-M02 is an NPN bipolar junction transistor (BJT) designed for automotive applications, holding an AEC-Q101 qualification. This transistor offers a collector-emitter breakdown voltage of 45V and can handle a maximum collector current of 100mA.

 

With a transition frequency of 100MHz and a power dissipation of 150mW, the NSVBC857CWT1G-M02 is suitable for moderate switching and amplification tasks within automotive electronic systems. It exhibits a minimum DC current gain (hFE) of 420 at 2mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 650mV at 5mA base current and 100mA collector current.

 

This component is supplied in an SC-70-3 (SOT323) surface-mount package, provided on tape and reel. Its typical applications include general-purpose amplification and switching circuits in the automotive sector.

NSVBC857CWT1G-M02 Quick Information

Product Type: Bipolar Junction Transistor
Series: Automotive, AEC-Q101
Canonical Name: NPN Bipolar Junction Transistor
Subcategory: Single

NSVBC857CWT1G-M02 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVBC857CWT1G-M02 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVBC857CWT1G-M02 Features

  • AEC-Q101 qualified NPN bipolar transistor.
  • 45V collector-emitter breakdown voltage.
  • 100mA maximum collector current.
  • 100MHz transition frequency.
  • SC-70-3 (SOT323) surface-mount package.

NSVBC857CWT1G-M02 Applications

  • Used in high-speed switching circuits
  • Suitable for signal amplification
  • Ideal for compact electronic devices
  • Applicable in RF and high-frequency applications

NSVBC857CWT1G-M02 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the NSVBC857CWT1G-M02?

The collector-emitter breakdown voltage is 45V.

What is the maximum collector current for this transistor?

The maximum collector current is 100 mA.

What is the transition frequency of the NSVBC857CWT1G-M02?

The transition frequency is 100MHz.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NSVBC857CWT1G-M02 supplied in?

It is supplied in an SC-70-3 (SOT323) surface-mount package.

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