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NSVBC850BLT1G NSVBC850BLT1G is an NPN bipolar junction transistor from On Semiconductor with a 45V collector-emitter breakdown voltage, 100mA maximum collector current, and 300mW power dissipation. Housed in a SOT-23 surface mount package.
Mfr Part #:

NSVBC850BLT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NSVBC850BLT1G is an NPN bipolar junction transistor from On Semiconductor with a 45V collector-emitter breakdown voltage, 100mA maximum collector current, and 300mW power dissipation. Housed in a SOT-23 surface mount package.
✓ Total Stock: 483,000 pcs
$ Price Range: $0.99

NSVBC850BLT1G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
483,000 pcs
On Request
483000 pcs On Request 1 On Request On Request On Request On Request On Request
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NSVBC850BLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Tape & Reel
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NSVBC850BLT1G Description

Short technical summary and product information.

The NSVBC850BLT1G is an NPN bipolar junction transistor manufactured by On Semiconductor. It offers a minimum collector-emitter breakdown voltage of 45V, making it suitable for low to medium voltage circuits. The maximum collector current is 100mA, and the device can dissipate up to 300mW of power. The transistor is housed in a compact SOT-23 surface mount package, which is ideal for space-constrained PCB designs. The standard package quantity is 3000 units per reel, supplied in tape and reel packaging for automated assembly.

NSVBC850BLT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT) - Single
Canonical Name: NSVBC850BLT1G NPN Bipolar Transistor
Subcategory: Single BJT

NSVBC850BLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVBC850BLT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVBC850BLT1G Features

  • Minimum 45V collector-emitter breakdown voltage.
  • Maximum 100mA collector current rating.
  • 300mW maximum power dissipation.
  • SOT-23 surface mount package.
  • Supplied in tape and reel packaging.

NSVBC850BLT1G Applications

  • Suitable for automotive AEC-Q101 applications
  • Used in general purpose switching circuits
  • Ideal for signal amplification stages
  • Designed for surface mount assembly
  • Common in low power driver circuits

NSVBC850BLT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the NSVBC850BLT1G?

45V minimum.

What is the maximum collector current?

100mA maximum.

What is the maximum power dissipation?

300mW maximum.

What is the package type?

SOT-23 surface mount package.

What is the mounting type?

Surface mount.

Is the device supplied in tape and reel?

Yes.

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