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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
121,300 pcs
|
121300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current - Continuous | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) - Min | |
| Frequency | |
| Gain-Bandwidth Product | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSVBC848CLT1G is a bipolar junction transistor (BJT) manufactured by On Semiconductor. It features an NPN configuration with a maximum collector-emitter voltage of 30V and a continuous collector current of 0.1A. The device is packaged in a SOT23-3 surface-mount package, making it suitable for compact electronic designs.
This transistor is used in switching applications, signal amplification, and low-power electronic circuits. Its electrical characteristics include a minimum DC current gain (hFE) of 200 at 2mA and 5V, and a maximum collector-emitter saturation voltage of 600mV at 5mA and 100mA. The device's total dissipation is rated at 225mW at 25°C.
Designed for ease of integration into various circuit configurations, the NSVBC848CLT1G is suitable for use in consumer electronics, automotive, and industrial applications where small size and reliable performance are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 30V.
The collector current is rated at 0.1A.