NSVBC847BDW1T2G This dual NPN transistor from ON Semiconductor is designed for general purpose amplifier applications. It features a 45V collector-emitter voltage and a 100mA continuous collector current.
Mfr Part #:

NSVBC847BDW1T2G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
This dual NPN transistor from ON Semiconductor is designed for general purpose amplifier applications. It features a 45V collector-emitter voltage and a 100mA continuous collector current.
✓ Total Stock: 42,000 pcs
$ Price Range: $0.99

NSVBC847BDW1T2G Available from 1 distributor

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✓ Non-Authorised
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NSVBC847BDW1T2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSVBC847BDW1T2G Description

Short technical summary and product information.

The NSVBC847BDW1T2G is a dual NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for general purpose amplifier applications and housed in a compact SOT-363/SC-88 surface mount package.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of up to 45V for the BC847 variant, a continuous collector current (IC) of 100mA, and a frequency response up to 100MHz. The device offers a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V VCE, with a saturation voltage (VCE(sat)) of 600mV at 100mA collector current and 5mA base current.

 

This transistor operates within a wide temperature range of -55°C to 150°C. It is Pb-Free and Halogen Free, complying with RoHS standards. The surface mount package is suitable for low-power applications where space is a consideration.

 

Designed for general purpose amplification, this dual transistor array can be utilized in various circuit designs requiring compact and reliable NPN amplification stages.

NSVBC847BDW1T2G Quick Information

Product Type: Transistor
Canonical Name: 2 NPN (Dual) Transistor
Subcategory: Array

NSVBC847BDW1T2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSVBC847BDW1T2G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVBC847BDW1T2G Features

  • Dual NPN transistor array.
  • 45V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • 100MHz frequency response.
  • Surface mount SC-88 package.

NSVBC847BDW1T2G Applications

  • General purpose amplifier circuits.
  • Low power signal amplification.
  • Compact electronic designs.
  • Surface mount applications.

NSVBC847BDW1T2G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the NSVBC847BDW1T2G?

The collector-emitter voltage (VCEO) for the BC847 variant is 45V.

What is the continuous collector current of this transistor?

The continuous collector current (IC) is 100mA.

What is the operating temperature range for this device?

The operating temperature range is -55°C to +150°C.

What package type is the NSVBC847BDW1T2G in?

It is supplied in an SC-88/SC70-6/SOT-363 package.

Is this transistor RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the minimum DC current gain (hFE)?

The minimum DC current gain (hFE) is 200 at 2mA collector current and 5V VCE.

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