| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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42,000 pcs
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42000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
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| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSVBC847BDW1T2G is a dual NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for general purpose amplifier applications and housed in a compact SOT-363/SC-88 surface mount package.
Key electrical characteristics include a collector-emitter voltage (VCEO) of up to 45V for the BC847 variant, a continuous collector current (IC) of 100mA, and a frequency response up to 100MHz. The device offers a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V VCE, with a saturation voltage (VCE(sat)) of 600mV at 100mA collector current and 5mA base current.
This transistor operates within a wide temperature range of -55°C to 150°C. It is Pb-Free and Halogen Free, complying with RoHS standards. The surface mount package is suitable for low-power applications where space is a consideration.
Designed for general purpose amplification, this dual transistor array can be utilized in various circuit designs requiring compact and reliable NPN amplification stages.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the BC847 variant is 45V.
The continuous collector current (IC) is 100mA.
The operating temperature range is -55°C to +150°C.
It is supplied in an SC-88/SC70-6/SOT-363 package.
Yes, it is RoHS3 Compliant.
The minimum DC current gain (hFE) is 200 at 2mA collector current and 5V VCE.