NSVBC818-40LT1G The ON Semiconductor NSVBC818-40LT1G is an NPN bipolar junction transistor designed for general-purpose applications. It features a 25V collector-emitter voltage and a 500mA continuous collector current.
Mfr Part #:

NSVBC818-40LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSVBC818-40LT1G is an NPN bipolar junction transistor designed for general-purpose applications. It features a 25V collector-emitter voltage and a 500mA continuous collector current.
Total Stock: 60,000 pcs
$ Price Range: $0.99

NSVBC818-40LT1G Available from 1 distributor

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NSVBC818-40LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter On Voltage
Collector Cutoff Current
Collector-Base Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Halogen Free
Junction and Storage Temperature
Mounting Type
Operating Temperature
Output Capacitance
Pd (Maximum @ TA = 25 °C on Alumina Substrate)
Pd (Maximum @ TA = 25 °C on FR -5 Board)
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
hFE (Minimum/Maximum @ IC = 100 mA, VCE = 1.0 V)

NSVBC818-40LT1G Description

Short technical summary and product information.

The ON Semiconductor NSVBC818-40LT1G is a general-purpose NPN silicon transistor. It is designed for applications requiring a 25V collector-emitter voltage and a continuous collector current of up to 500mA.

 

Key electrical characteristics include a DC current gain (hFE) of 250 minimum at 100mA and 1V, and a current-gain-bandwidth product (fT) of 100MHz at 10mA and 5V. The transistor has a maximum collector-emitter saturation voltage (VCE(sat)) of 0.7V at 500mA and 50mA base current.

 

This device is supplied in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. It operates over a wide temperature range of -55°C to 150°C.

 

The NSVBC818-40LT1G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, indicating its suitability for environmentally conscious manufacturing processes.

NSVBC818-40LT1G Quick Information

Product Type: NPN Transistor
Canonical Name: NPN Transistor
Subcategory: NPN

NSVBC818-40LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSVBC818-40LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVBC818-40LT1G Features

  • NPN silicon general purpose transistor.
  • 25V collector-emitter voltage rating.
  • 500mA continuous collector current.
  • 100MHz current-gain-bandwidth product.
  • SOT-23-3 surface mount package.

NSVBC818-40LT1G Applications

  • Suitable for general purpose amplification.
  • Used for low power switching circuits.
  • Ideal for space-constrained designs.
  • Applications requiring 25V breakdown voltage.

NSVBC818-40LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (Vceo) for the NSVBC818-40LT1G?

The maximum collector-emitter voltage (Vceo) is 25 V.

What is the continuous collector current (Ic) rating for this transistor?

The continuous collector current (Ic) is 500 mA.

What is the package type for the NSVBC818-40LT1G?

The transistor is supplied in a SOT-23-3 (TO-236) surface mount package.

What is the operating temperature range of the NSVBC818-40LT1G?

The operating temperature range is -55°C to 150°C.

Is the NSVBC818-40LT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

Is the NSVBC818-40LT1G lead-free?

Yes, the device is Pb-Free.

Is the NSVBC818-40LT1G halogen-free?

Yes, the device is Halogen Free.

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