NSVBC114YDXV6T1G

The ON Semiconductor NSVBC114YDXV6T1G is a dual NPN pre-biased transistor, part of a series designed to replace single devices and external resistor bias networks. This integration simplifies circuit design, reduces component count, and saves board space.

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 50Vdc and a continuous collector current (IC) of 100mAdc. The device features a pre-bias resistor network with a nominal resistance of 47kΩ. It offers a minimum DC current gain (hFE) of 80 at 5mA and 10V, with a maximum Vce saturation of 250mV at 300µA and 10mA.

This transistor is housed in a compact SOT-563 surface-mount package, making it suitable for space-constrained applications. The device is rated for a power dissipation of 500mW. It is designed to replace discrete transistors and their associated biasing resistors, offering a cost-effective and efficient solution for various digital and analog circuits.

Features such as AEC-Q101 qualification and PPAP capability are available for S and NSV prefix devices, indicating suitability for automotive and other demanding applications. The NSVBC114YDXV6T1G is RoHS3 compliant, MSL 1, and REACH unaffected.