NSVBAT54SWT1G Dual series Schottky barrier diode array with 30V reverse voltage rating and 200mA forward current. Supplied in a miniature SC-70/SOT-323 surface-mount package.
Mfr Part #:

NSVBAT54SWT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual series Schottky barrier diode array with 30V reverse voltage rating and 200mA forward current. Supplied in a miniature SC-70/SOT-323 surface-mount package.
✓ Total Stock: 334,539 pcs
$ Price Range: $0.04 - $0.24

NSVBAT54SWT1G Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
330,000 pcs
330000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,539 pcs
3539 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

NSVBAT54SWT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Diode Configuration
Forward Current
Halogen Free
Junction Temperature
Mounting Type
Operating Temperature
Reverse Recovery Time (trr)
Reverse Voltage
Speed
Supplier Device Package
Tape & Reel
Technology
Voltage

NSVBAT54SWT1G Description

Short technical summary and product information.

The NSVBAT54SWT1G is a dual series Schottky barrier diode array from onsemi, designed for high-speed switching applications, circuit protection, and voltage clamping.

 

The device features a reverse voltage rating of 30V and a forward current of 200mA DC. Typical forward voltage is 0.35V at 10mA and 0.52V at 100mA, with a maximum forward voltage of 0.40V at 10mA and 0.8V at 100mA. Reverse leakage current is a maximum of 2µA at 25V reverse bias. Maximum reverse recovery time is 5.0ns, and typical total capacitance is 7.6pF at 1V reverse bias.

 

The NSVBAT54SWT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications. It is Pb-Free, Halogen Free/BFR Free, and RoHS3 compliant. The operating and junction temperature range is -55°C to 125°C, with a storage temperature range of -55°C to 150°C. This device is offered in an SC-70/SOT-323 surface-mount package and is supplied on tape and reel.

NSVBAT54SWT1G Quick Information

Product Type: Schottky Diode Array
Canonical Name: Dual Series Schottky Barrier Diode Array
Subcategory: Dual Series Configuration

NSVBAT54SWT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSVBAT54SWT1G Estimated Pricing

Qty Low High
1+ $0.24 $0.24
10+ $0.15 $0.15
100+ $0.09 $0.09
500+ $0.07 $0.07
1,000+ $0.06 $0.06
3,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVBAT54SWT1G Features

  • Dual series Schottky barrier diode configuration.
  • Rated for 30V reverse voltage and 200mA forward current.
  • Low forward voltage of 0.35V typical at 10mA.
  • Extremely fast 5ns reverse recovery time.
  • AEC-Q101 qualified for automotive applications.

NSVBAT54SWT1G Applications

  • High-speed switching circuits and logic level shifters.
  • Reverse polarity protection and voltage clamping.
  • Portable and handheld device protection.
  • Automotive electronic control modules.

NSVBAT54SWT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the reverse voltage rating of the NSVBAT54SWT1G?

The NSVBAT54SWT1G has a reverse voltage rating of 30V.

What is the maximum forward current?

The maximum DC forward current is 200mA.

What is the forward voltage drop at 10mA?

Typical forward voltage is 0.35V at 10mA; maximum is 0.40V at 10mA.

What is the reverse recovery time?

Maximum reverse recovery time is 5.0ns.

What package is the NSVBAT54SWT1G available in?

It is offered in an SC-70/SOT-323 surface-mount package (supplier device package SC-70-3).

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