| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | 2019+ | On Request | On Request | |
|
22,020 pcs
|
22020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| AEC-Q101 | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage (Maximum @ IF = 100 mA) | |
| Forward Voltage (Maximum @ IF = 200 mA) | |
| Halogen Free | |
| Junction and Storage Temperature Range | |
| Mounting Type | |
| Operating Temperature | |
| Peak Forward Surge Current | |
| Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C) | |
| Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C) | |
| Reverse Breakdown Voltage | |
| Reverse Leakage Current (Maximum @ VR=200 V) | |
| Reverse Leakage Current (Maximum @ VR=200 V, Tj=150 °C) | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate) | |
| Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board) | |
| Voltage |
The NSVBAS21SLT1G is a dual series high-voltage switching diode manufactured by On Semiconductor. It is designed for general-purpose switching applications requiring high reverse voltage capability up to 250V. The device is capable of handling a forward current of 225mA and a peak forward surge current of 625mA.
Key electrical characteristics include a maximum forward voltage of 1.25V at 200mA, a reverse recovery time of 50ns (typical switching speed), and a low diode capacitance of 5pF at 0V and 1MHz. The reverse leakage current is only 0.1µA at 200V, increasing to 100µA at 150°C junction temperature.
The diode is housed in a surface-mount SOT-23 (TO-236) package, making it suitable for compact PCB designs. It offers a power dissipation of 225mW on FR-5 board and 300mW on alumina substrate. The operating temperature range is -55°C to +150°C.
The device is RoHS compliant, Pb-Free, Halogen Free/BFR Free, and AEC-Q101 qualified for automotive applications. Moisture sensitivity level is 1 (unlimited). The NSV prefix indicates automotive grade with PPAP capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.21 | $0.21 |
| 10+ | $0.13 | $0.13 |
| 100+ | $0.08 | $0.08 |
| 500+ | $0.06 | $0.06 |
| 1,000+ | $0.05 | $0.05 |
| 3,000+ | $0.04 | $0.04 |
| 6,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 250V.
The maximum forward current is 225mA.
The maximum forward voltage is 1.25V at 200mA.
The maximum reverse recovery time is 50ns under test conditions IF=IR=30mA, RL=100Ω.
It is available in a surface-mount SOT-23 (TO-236) package.
-55°C to +150°C.
Yes, it is AEC-Q101 qualified and PPAP capable.