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NSVBA114EDXV6T1G The NSVBA114EDXV6T1G is a dual PNP pre-biased transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA collector current.
Mfr Part #:

NSVBA114EDXV6T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVBA114EDXV6T1G is a dual PNP pre-biased transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA collector current.
✓ Total Stock: 36,000 pcs
$ Price Range: $0.99

NSVBA114EDXV6T1G Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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36,000 pcs
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NSVBA114EDXV6T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSVBA114EDXV6T1G Description

Short technical summary and product information.

The NSVBA114EDXV6T1G is a dual PNP pre-biased transistor array manufactured by ON Semiconductor. This device integrates two PNP transistors with monolithic bias resistor networks, simplifying circuit design and reducing component count. It offers a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA.

 

The transistor array includes integrated resistors with nominal values of 10kΩ for both R1 (base resistor) and R2 (base-emitter resistor). It has a minimum DC current gain (hFE) of 35 at 5mA collector current and 10V Vce. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current.

 

This component is supplied in a compact SOT-563 surface mount package, suitable for applications where board space is limited. It is also available in SOT-666 packaging. The device is Pb-Free and Halogen Free, complying with RoHS standards.

 

Key electrical characteristics include a maximum power dissipation of 500mW and a maximum collector cutoff current of 500nA. The input forward voltage is rated at 40Vdc, and the input reverse voltage is 10Vdc.

NSVBA114EDXV6T1G Quick Information

Product Type: Dual PNP Pre-Biased Transistor
Canonical Name: Dual PNP Pre-Biased Transistor
Subcategory: Pre-Biased Transistor Arrays

NSVBA114EDXV6T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVBA114EDXV6T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVBA114EDXV6T1G Features

  • Dual PNP pre-biased transistor array
  • 50V collector-emitter voltage rating
  • 100mA continuous collector current
  • Integrated 10kΩ bias resistors
  • Compact SOT-563 surface mount package

NSVBA114EDXV6T1G Applications

  • Simplifies digital circuit designs
  • Reduces component count
  • Ideal for space-constrained applications
  • Suitable for logic level shifting

NSVBA114EDXV6T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVBA114EDXV6T1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the maximum power dissipation?

The maximum power dissipation is 500mW.

What are the integrated resistor values?

The integrated resistors R1 and R2 both have a nominal value of 10kΩ.

What package type is the NSVBA114EDXV6T1G supplied in?

It is supplied in a SOT-563 package.

Is this component RoHS compliant?

Yes, it is RoHS3 Compliant.

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