| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,000 pcs
|
27000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor NSVB1706DMW5T1G is a Dual Bias Resistor Transistor (BRT) featuring two NPN silicon transistors with integrated monolithic bias resistor networks. This design simplifies circuit design, reduces board space, and lowers component count by replacing individual transistors and external resistors.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a maximum collector current (IC) of 100mA. The device offers a minimum DC current gain (hFE) of 80 at 5mA/10V and a Vce saturation of 250mV at 1mA/10mA. It includes a nominal resistor value of 47kΩ.
This transistor is housed in an SC-88A package, also known as SC-70-5 or SOT-353, making it suitable for low power surface mount applications where board space is limited. The device operates within a junction and storage temperature range of -55°C to +150°C.
The NSVB1706DMW5T1G is Pb-Free and Halogen Free, complying with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
The maximum collector current (IC) is 100 mAdc.
The device is supplied in an SC-88A package, also referred to as SC-70-5 or SOT-353.
The junction and storage temperature range is -55°C to +150°C.
The integrated resistor value is 47kΩ.