NSV60600MZ4T1G The ON Semiconductor NSV60600MZ4T1G is a PNP bipolar transistor designed for low voltage, high-speed switching applications. It features low VCE(sat) and high current gain.
Mfr Part #:

NSV60600MZ4T1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSV60600MZ4T1G is a PNP bipolar transistor designed for low voltage, high-speed switching applications. It features low VCE(sat) and high current gain.
Total Stock: 12,000 pcs
$ Price Range: $0.99

NSV60600MZ4T1G Available from 3 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request
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1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

NSV60600MZ4T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ Peak)

NSV60600MZ4T1G Description

Short technical summary and product information.

The ON Semiconductor NSV60600MZ4T1G is a PNP low VCE(sat) transistor designed for efficient energy control in low voltage, high-speed switching applications. It is part of ON Semiconductor's e2PowerEdge family, offering ultra-low saturation voltage and high current gain capability.

 

Key electrical specifications include a collector-emitter voltage of -60V, a continuous collector current of -6A, and a peak collector current of -12A. The device exhibits a minimum DC current gain (hFE) of 120 at 1A and 2V, with a Vce saturation of 350mV maximum at 600mA collector current and 6A base current. Its gain bandwidth product is 100MHz.

 

This transistor is housed in a SOT-223 (TO-261) surface mount package. It operates within a temperature range of -55°C to 150°C. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

 

Typical applications include DC-DC converters, power management in portable and battery-powered products, and low voltage motor controls. Its high current gain allows it to be driven directly from PMU control outputs.

NSV60600MZ4T1G Quick Information

Product Type: Bipolar Transistor
Series: NSS60600
Canonical Name: PNP Low VCE(sat) Transistor
Subcategory: Transistors

NSV60600MZ4T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSV60600MZ4T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSV60600MZ4T1G Features

  • PNP bipolar transistor for switching applications.
  • Low VCE(sat) for efficient energy control.
  • Rated for 60V collector-emitter voltage.
  • Handles 6A continuous collector current.
  • Surface mount SOT-223 package.

NSV60600MZ4T1G Applications

  • Used in DC-DC converters.
  • Power management in portable devices.
  • Low voltage motor control circuits.
  • Suitable for battery-powered products.

NSV60600MZ4T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSV60600MZ4T1G?

-60 V

What is the continuous collector current rating?

6 A

What is the operating temperature range?

-55°C to 150°C

What package type is the NSV60600MZ4T1G supplied in?

SOT-223 (TO-261)

Is the NSV60600MZ4T1G RoHS compliant?

RoHS3 Compliant

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