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NSV60101DMR6T1G The NSV60101DMR6T1G is a dual NPN transistor from On Semiconductor, offering 60V collector-emitter voltage and 1A continuous collector current. It features low VCE(sat) and high current gain.
Mfr Part #:

NSV60101DMR6T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSV60101DMR6T1G is a dual NPN transistor from On Semiconductor, offering 60V collector-emitter voltage and 1A continuous collector current. It features low VCE(sat) and high current gain.
✓ Total Stock: 198,000 pcs
$ Price Range: $0.99

NSV60101DMR6T1G Available from 1 distributor

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✓ Non-Authorised
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198,000 pcs
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NSV60101DMR6T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSV60101DMR6T1G Description

Short technical summary and product information.

The On Semiconductor NSV60101DMR6T1G is a dual NPN bipolar junction transistor designed for low voltage, high speed switching applications. It belongs to ON Semiconductor's e2PowerEdge family, characterized by ultra-low saturation voltage (VCE(sat)) and high current gain capability.

 

This transistor operates with a maximum collector-emitter voltage of 60V and a continuous collector current of 1A. Key electrical characteristics include a minimum DC current gain (hFE) of 250 at 100mA and 5V, and a maximum VCE saturation of 200mV at 100mA and 1A. It also offers a frequency response up to 200MHz.

 

Designed for efficient energy control, typical applications include DC-DC converters, LED lighting, and power management systems. In the automotive sector, it can be utilized in airbag deployment systems and instrument clusters. The high current gain allows direct driving from PMU control outputs, and its linear gain (Beta) makes it suitable for analog amplifiers.

 

The NSV60101DMR6T1G is supplied in a compact SC-74 (SOT-457) surface mount package. It operates within a temperature range of -55°C to +150°C. The device is Pb-free, Halogen-free/BFR-free, and RoHS compliant.

NSV60101DMR6T1G Quick Information

Product Type: Dual NPN Transistor
Canonical Name: Dual NPN Low VCE(sat) Transistor, 60V, 1A
Subcategory: Arrays

NSV60101DMR6T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSV60101DMR6T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSV60101DMR6T1G Features

  • Dual NPN low VCE(sat) transistor.
  • 60V collector-emitter voltage rating.
  • 1A continuous collector current.
  • High current gain capability.
  • Pb-free and halogen-free construction.

NSV60101DMR6T1G Applications

  • Used in DC-DC converters.
  • Suitable for LED lighting applications.
  • Applied in automotive systems.
  • Ideal for power management circuits.

NSV60101DMR6T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSV60101DMR6T1G?

The maximum collector-emitter voltage (VCEO) for the NSV60101DMR6T1G is 60 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) is rated at 1 A.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +150°C.

Is the NSV60101DMR6T1G RoHS compliant?

Yes, the NSV60101DMR6T1G is RoHS3 Compliant.

What package type is the NSV60101DMR6T1G supplied in?

The NSV60101DMR6T1G is supplied in a SC-74, SOT-457 package.

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