| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,998 pcs
|
2998 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Halogen Free | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor NSV60100DMTWTBG is a dual PNP transistor array belonging to the e2 PowerEdge family. These miniature surface mount devices offer ultra-low saturation voltage and high current gain capability, making them suitable for affordable, efficient energy control in low voltage, high speed switching applications.
Key electrical specifications include a 60V collector-emitter voltage (VCEO) and a continuous collector current (IC) of 1A. The device boasts a typical DC current gain (hFE) of 120 at 500mA and 2V, with a maximum Vce saturation of 300mV at 100mA and 2A. Its operating frequency reaches 155MHz.
Thermal characteristics are also important, with a total power dissipation of 2.27W at 25°C and a per-transistor power dissipation of 1.8W. The operating temperature range is -55°C to 150°C (TJ).
This transistor array is housed in a 6-WDFN Exposed Pad package, designed for surface mounting. It is Pb-Free and Halogen Free, compliant with RoHS3 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSV60100DMTWTBG is 60 Vdc.
The continuous collector current (IC) rating is 1 A.
The operating temperature range is -55°C to 150°C.
The NSV60100DMTWTBG is supplied in a 6-WDFN Exposed Pad package.
The NSV60100DMTWTBG is RoHS3 Compliant.