NSV40302PDR2G The ON Semiconductor NSV40302PDR2G is a complementary NPN/PNP bipolar junction transistor designed for low voltage, high speed switching applications. It features a 40V collector-emitter voltage and 3A continuous collector current.
Mfr Part #:

NSV40302PDR2G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSV40302PDR2G is a complementary NPN/PNP bipolar junction transistor designed for low voltage, high speed switching applications. It features a 40V collector-emitter voltage and 3A continuous collector current.
✓ Total Stock: 5,415 pcs
$ Price Range: $0.99

NSV40302PDR2G Available from 1 distributor

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NSV40302PDR2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSV40302PDR2G Description

Short technical summary and product information.

The ON Semiconductor NSV40302PDR2G is a complementary NPN and PNP transistor from the e2PowerEdge family, designed for low voltage, high speed switching applications requiring efficient energy control. It offers a low saturation voltage (VCE(sat)) and high current gain capability.

 

Key electrical specifications include a 40V collector-emitter voltage (VCEO), a 3A continuous collector current (IC), and a peak collector current (ICM) of 6A. The DC current gain (hFE) is a minimum of 180 at 1A and 2V, with a Vce saturation of 115mV maximum at 200mA and 2A. It operates at frequencies up to 100MHz.

 

This device is housed in an 8-SOIC surface mount package. It operates within a temperature range of -55°C to 150°C (TJ). The total power dissipation is rated at 653mW at 25°C ambient temperature.

 

Applications include low voltage motor controls in mass storage products like disc and tape drives, and automotive uses such as airbag deployment and instrument clusters. Its high current gain allows direct driving from PMU control outputs, and its linear gain makes it suitable for analog amplifiers.

NSV40302PDR2G Quick Information

Product Type: Transistor
Series: e2PowerEdge
Canonical Name: NPN/PNP 40V 3A 8-SOIC Low VCE(sat) Transistor
Subcategory: Arrays

NSV40302PDR2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSV40302PDR2G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSV40302PDR2G Features

  • Complementary NPN and PNP transistor types.
  • 40V collector-emitter voltage rating.
  • 3A continuous collector current capability.
  • Low VCE(sat) for efficient switching.
  • Surface mount 8-SOIC package.

NSV40302PDR2G Applications

  • Low voltage motor controls.
  • Mass storage device applications.
  • Automotive airbag deployment.
  • Automotive instrument clusters.
  • Analog amplifier circuits.

NSV40302PDR2G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSV40302PDR2G?

The maximum collector-emitter voltage (VCEO) for the NSV40302PDR2G is 40 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) is rated at 3 A.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NSV40302PDR2G supplied in?

This transistor is supplied in an 8-SOIC package.

Is the NSV40302PDR2G RoHS compliant?

Yes, the NSV40302PDR2G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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