NSV40301MDR2G The On Semiconductor NSV40301MDR2G is a dual NPN transistor array designed for low VCE(sat) applications. It offers high current gain and matched parameters.
Mfr Part #:

NSV40301MDR2G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSV40301MDR2G is a dual NPN transistor array designed for low VCE(sat) applications. It offers high current gain and matched parameters.
✓ Total Stock: 3,520 pcs
$ Price Range: $0.99

NSV40301MDR2G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,520 pcs
3520 pcs On Request 1 On Request On Request On Request On Request On Request

NSV40301MDR2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Package / Case
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSV40301MDR2G Description

Short technical summary and product information.

The On Semiconductor NSV40301MDR2G is part of the e2PowerEdge family of low VCE(sat) transistors. This dual NPN transistor array features highly matched parameters, including ultra-low saturation voltage, high current gain, and matched Base/Emitter turn-on voltage.

 

Key electrical specifications include a Collector-Emitter Voltage of 40V, continuous Collector Current of 3A, and peak Collector Current of 6A. The device operates at frequencies up to 100MHz and has a DC Current Gain (hFE) of 180 minimum at 2A and 2V. The Collector-Emitter Saturation Voltage (Vce(sat)) is a maximum of 115mV at 200mA and 2A.

 

Typical applications for this transistor array include current mirrors, differential amplifiers, DC-DC converters, and power management in portable and battery-powered devices. It is also suitable for low voltage motor controls in mass storage products and automotive applications like airbag deployment and instrument clusters. The high current gain allows direct driving from PMU control outputs.

 

The NSV40301MDR2G is supplied in a Pb-Free 8-SOIC package (0.154", 3.90mm Width) suitable for surface mounting. It is available on tape and reel with a standard package quantity of 2500 units.

NSV40301MDR2G Quick Information

Product Type: Transistor Array
Canonical Name: Dual Matched 40 V, 6.0 A, Low VCE(sat) NPN Transistor
Subcategory: Arrays

NSV40301MDR2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NSV40301MDR2G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSV40301MDR2G Features

  • Dual NPN transistor array.
  • Low VCE(sat) and matched parameters.
  • 40V Collector-Emitter Voltage.
  • 3A Continuous Collector Current.
  • 8-SOIC surface mount package.

NSV40301MDR2G Applications

  • Used in current mirrors.
  • Suitable for differential amplifiers.
  • Power management in portable devices.
  • Low voltage motor controls.
  • Automotive applications.

NSV40301MDR2G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Collector-Emitter Voltage for the NSV40301MDR2G?

The maximum Collector-Emitter Voltage (VCEO) is 40 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) is rated at 3.0 A.

What is the package type for this transistor array?

The NSV40301MDR2G is supplied in an 8-SOIC package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

Is this device RoHS compliant?

Yes, this device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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