| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,520 pcs
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3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor NSV40301MDR2G is part of the e2PowerEdge family of low VCE(sat) transistors. This dual NPN transistor array features highly matched parameters, including ultra-low saturation voltage, high current gain, and matched Base/Emitter turn-on voltage.
Key electrical specifications include a Collector-Emitter Voltage of 40V, continuous Collector Current of 3A, and peak Collector Current of 6A. The device operates at frequencies up to 100MHz and has a DC Current Gain (hFE) of 180 minimum at 2A and 2V. The Collector-Emitter Saturation Voltage (Vce(sat)) is a maximum of 115mV at 200mA and 2A.
Typical applications for this transistor array include current mirrors, differential amplifiers, DC-DC converters, and power management in portable and battery-powered devices. It is also suitable for low voltage motor controls in mass storage products and automotive applications like airbag deployment and instrument clusters. The high current gain allows direct driving from PMU control outputs.
The NSV40301MDR2G is supplied in a Pb-Free 8-SOIC package (0.154", 3.90mm Width) suitable for surface mounting. It is available on tape and reel with a standard package quantity of 2500 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) is 40 Vdc.
The continuous collector current (IC) is rated at 3.0 A.
The NSV40301MDR2G is supplied in an 8-SOIC package.
The operating temperature range is -55°C to 150°C (TJ).
Yes, this device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.