NSV2SC5658M3T5G The On Semiconductor NSV2SC5658M3T5G is an NPN silicon general purpose amplifier transistor. It is housed in a space-saving SOT-723 package.
Mfr Part #:

NSV2SC5658M3T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSV2SC5658M3T5G is an NPN silicon general purpose amplifier transistor. It is housed in a space-saving SOT-723 package.
Total Stock: 16,000 pcs
$ Price Range: $0.99

NSV2SC5658M3T5G Available from 1 distributor

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NSV2SC5658M3T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Base Voltage
Current
DC Current Gain (Minimum/Typical @ VCE = 6.0 Vdc, IC = 1.0 mAdc)
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Performance (Typical @ Human Body Model)
ESD Performance (Typical @ Machine Model)
Emitter-Base Voltage
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Power
Storage Temperature Range
Supplier Device Package
Tape & Reel
Tape and Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSV2SC5658M3T5G Description

Short technical summary and product information.

This NPN transistor from On Semiconductor is designed for general purpose amplifier applications. The NSV2SC5658M3T5G features a collector-emitter voltage of 50V and a continuous collector current of 150mA.

 

It is housed in a compact SOT-723 surface mount package, making it suitable for applications where board space is limited. The transistor offers a low VCE(sat) of less than 0.5V and a typical DC current gain (hFE) ranging from 210 to 460.

 

Key electrical characteristics include a transition frequency of 180MHz. The device also exhibits good ESD performance, with a Human Body Model rating of 2000V and a Machine Model rating of 200V. It operates within a junction temperature range of -55°C to 150°C and has a power dissipation of 260mW when mounted on a recommended FR-4 footprint.

 

The NSV2SC5658M3T5G is available on 8mm, 7-inch tape and reel, with 3000 units per reel. The NSV prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

NSV2SC5658M3T5G Quick Information

Product Type: NPN Transistor
Canonical Name: NPN Silicon General Purpose Amplifier Transistor
Subcategory: Bipolar (BJT) - Single

NSV2SC5658M3T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NSV2SC5658M3T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSV2SC5658M3T5G Features

  • NPN silicon general purpose amplifier transistor.
  • Compact SOT-723 surface mount package.
  • 50V collector-emitter voltage rating.
  • 150mA continuous collector current.
  • High DC current gain (hFE) up to 460.

NSV2SC5658M3T5G Applications

  • Suitable for low power applications.
  • Ideal for space-constrained designs.
  • General purpose amplifier circuits.
  • Automotive applications with NSV prefix.

NSV2SC5658M3T5G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSV2SC5658M3T5G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 150 mA.

What is the power dissipation of this transistor?

The power dissipation is 260 mW at 25°C (TA).

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What is the typical DC current gain (hFE)?

The typical DC current gain (hFE) is between 210 and 460.

What package type is the NSV2SC5658M3T5G supplied in?

It is supplied in a SOT-723 package.

Is this transistor RoHS compliant?

Yes, it is RoHS3 Compliant.

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