| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,000 pcs
|
16000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Conflict Minerals | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| SVHC Present |
The NSV2SA2029M3T5G from On Semiconductor is a single PNP bipolar junction transistor (BJT) designed for various electronic applications. This component features a collector-emitter voltage (VCEO) of 50V and a continuous collector current (Ic) of 100mA. Its transition frequency (fT) is rated at 140MHz, indicating suitability for moderate-frequency switching and amplification tasks.
The transistor is housed in a compact SOT-723 surface-mount package, making it ideal for space-constrained designs. It operates within a temperature range of -55℃ to +150℃. Key electrical characteristics include a typical DC current gain (hFE) of 120 and a power dissipation (Pd) of 265mW.
This device is specified with a collector-emitter saturation voltage (VCE(sat)) of 500mV and an emitter-base voltage (VEBO) of 6V. The collector cutoff current (Ic) is a low 500pA. The NSV2SA2029M3T5G is suitable for general-purpose amplification and switching circuits where a PNP transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to +150°C.
The typical transition frequency is 140MHz.
The collector-emitter voltage (VCEO) is 50V.
The collector current is 100mA.
The power dissipation is 265mW.
SOT-723 surface mount package.
The DC current gain (hFE) is 120.