NSS20200DMTTBG
On Semiconductor
The NSS20200DMTTBG is a 20V, 2A PNP transistor from ON Semiconductor. It features low VCE(sat) and is housed in a 6-WDFN package.
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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vce Saturation (Max) @ Ib, Ic |
The ON Semiconductor NSV20200DMTWTBG is a PNP transistor from the e2PowerEdge family, designed for efficient energy control in low voltage, high speed switching applications. It offers a low saturation voltage (VCE(sat)) and high current gain capability, allowing it to be driven directly from PMU control outputs.
Key electrical characteristics include a collector-emitter voltage of 20V, a continuous collector current of 2A, and a peak collector current of 3A. The device operates at a frequency of 155MHz and has a DC current gain (hFE) of 250 at 100mA and 2V. Its Vce saturation is a maximum of 390mV at 200mA and 2A.
This transistor is housed in a 6-WDFN exposed pad package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C. The device is Pb-Free and Halogen Free, compliant with RoHS standards.
Typical applications include DC-DC converters, LED lighting, and power management. In the automotive industry, it can be used in air bag deployment and instrument clusters. Its linear gain also makes it suitable for analog amplifier circuits.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 20 Vdc.
The continuous collector current is 2 A.
The operating temperature range is -55°C to 150°C.
It is in a 6-WDFN Exposed Pad package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The Vce Saturation is a maximum of 390mV at 200mA, 2A.