| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,520 pcs
|
13520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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The ON Semiconductor NSV1C301ET4G is a surface mount NPN bipolar junction transistor (BJT) from the e2PowerEdge family, designed for efficient energy control in low voltage, high speed switching applications. It offers a low saturation voltage (VCE(sat)) of 250mV at 300mA and 3A, along with a high current gain (hFE) of 200 at 500mA and 2V.
This transistor has a maximum collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 3A. Its operating frequency reaches up to 120MHz. The device is housed in a DPAK (TO-252-3) surface mount package, suitable for automated assembly processes.
Typical applications include DC-DC converters, power management in portable and battery-powered devices, and low voltage motor controls. The NSV1C301ET4G is also AEC-Q101 qualified, making it suitable for automotive applications. It is Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSV1C301ET4G is 100V.
The continuous collector current (IC) rating for the NSV1C301ET4G is 3A.
The Vce saturation (VCE(sat)) is a maximum of 250mV at 300mA base current and 3A collector current.
The operating and storage junction temperature range is -65°C to 150°C.
The NSV1C301ET4G is supplied in a DPAK (TO-252-3) surface mount package.
Yes, the NSV1C301ET4G is RoHS3 Compliant.