NSV1C201MZ4T1G The On Semiconductor NSV1C201MZ4T1G is an NPN bipolar junction transistor designed for low VCE(sat) applications. It features a 100V collector-emitter voltage and 2A continuous current.
Mfr Part #:

NSV1C201MZ4T1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSV1C201MZ4T1G is an NPN bipolar junction transistor designed for low VCE(sat) applications. It features a 100V collector-emitter voltage and 2A continuous current.
Total Stock: 67,862 pcs
$ Price Range: $0.99

NSV1C201MZ4T1G Available from 4 distributors

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Non-Authorised

NSV1C201MZ4T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation (Maximum)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Thermal Resistance (Maximum @ TA = 25 °C)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSV1C201MZ4T1G Description

Short technical summary and product information.

This NPN bipolar junction transistor from ON Semiconductor is part of their e2PowerEdge family, offering low VCE(sat) and high current gain. It is suitable for low voltage, high-speed switching applications.

 

Key electrical specifications include a maximum collector-emitter voltage of 100V and a continuous collector current of 2A. The device boasts a high DC current gain (hFE) of 120 at 500mA and 2V, with a Vce saturation of 180mV at 200mA and 2A. Its operating frequency reaches up to 100MHz.

 

The transistor operates within a junction and storage temperature range of -55°C to 150°C. It is housed in a SOT-223 (TO-261) surface mount package, with a total device dissipation of 800 mW at 25°C (Note 1) and 2W at 25°C (Note 2).

 

Typical applications include DC-DC converters, power management in portable devices, and low voltage motor controls. The NSV prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification.

NSV1C201MZ4T1G Quick Information

Product Type: NPN Transistor
Canonical Name: NPN Transistor
Subcategory: Bipolar (BJT) - Single

NSV1C201MZ4T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSV1C201MZ4T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSV1C201MZ4T1G Features

  • 100V collector-emitter voltage rating.
  • 2A continuous collector current.
  • High DC current gain (hFE) of 120.
  • Low Vce saturation voltage.
  • Surface mount SOT-223 package.

NSV1C201MZ4T1G Applications

  • Used in DC-DC converters.
  • Power management for portable devices.
  • Low voltage motor controls.
  • Automotive applications.

NSV1C201MZ4T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSV1C201MZ4T1G?

The maximum collector-emitter voltage is 100 Vdc.

What is the continuous collector current rating?

The continuous collector current is 2 A.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the NSV1C201MZ4T1G supplied in?

It is supplied in a SOT-223 package.

Is this transistor RoHS compliant?

Yes, it is RoHS3 Compliant.

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