NSV1C201LT1G The ON Semiconductor NSV1C201LT1G is an NPN transistor designed for low voltage, high speed switching applications. It offers a 100V collector-emitter voltage and 2A continuous current.
Mfr Part #:

NSV1C201LT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSV1C201LT1G is an NPN transistor designed for low voltage, high speed switching applications. It offers a 100V collector-emitter voltage and 2A continuous current.
Total Stock: 10,770 pcs
$ Price Range: $0.99

NSV1C201LT1G Available from 4 distributors

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Non-Authorised

NSV1C201LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
BFR Free
Collector Current - Continuous
Collector Current - Peak
Collector-Base Voltage
Collector-Emitter Voltage
Current
Current - Collector Cutoff
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Frequency - Transition
Halogen Free
Junction and Storage Temperature Range
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation Total (Maximum @ TA = 25 °C (Note 1)
Power Dissipation Total (Maximum @ TA = 25 °C (Note 2)
Supplier Device Package
Thermal Resistance Junction Ambient (@ Note 1)
Thermal Resistance Junction Ambient (@ Note 2)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSV1C201LT1G Description

Short technical summary and product information.

The ON Semiconductor NSV1C201LT1G is a miniature surface mount NPN transistor from the e2 PowerEdge family, designed for efficient energy control in low voltage, high speed switching applications. It features an ultra-low saturation voltage and high current gain capability.

 

Key electrical specifications include a maximum collector-emitter voltage of 100 Vdc and a continuous collector current of 2.0 A, with a peak current capability of 3.0 A. The device operates with a transition frequency of 110 MHz and offers a minimum DC current gain (hFE) of 120 at 500mA and 2V. The Vce saturation is a maximum of 150mV at 200mA and 2A.

 

Thermal characteristics include a total device dissipation of 490 mW at 25°C (TA) with a junction-to-ambient thermal resistance of 255 °C/W under specific PCB conditions. The operating and storage temperature range is from -55°C to +150°C.

 

This transistor is housed in a compact SOT-23-3 (TO-236) surface mount package, suitable for space-constrained designs. It is Pb-free, Halogen Free/BFR Free, and RoHS compliant.

NSV1C201LT1G Quick Information

Product Type: NPN Transistor
Canonical Name: NPN Transistor NSV1C201LT1G
Subcategory: Bipolar (BJT) - Single

NSV1C201LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSV1C201LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSV1C201LT1G Features

  • 100V collector-emitter voltage rating.
  • 2A continuous collector current.
  • Low Vce(sat) of 150mV.
  • 110MHz transition frequency.
  • Pb-Free, Halogen Free, RoHS compliant.

NSV1C201LT1G Applications

  • Suitable for DC-DC converters.
  • Used in power management circuits.
  • Ideal for high speed switching.
  • Designed for portable electronics.

NSV1C201LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSV1C201LT1G?

The maximum collector-emitter voltage (VCEO) for the NSV1C201LT1G is 100 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the NSV1C201LT1G is 2 A.

What is the operating temperature range?

The operating temperature range for this transistor is -55°C to +150°C (TJ).

What package type is the NSV1C201LT1G supplied in?

The NSV1C201LT1G is supplied in a SOT-23-3 (TO-236) surface mount package.

Is the NSV1C201LT1G RoHS compliant?

Yes, the NSV1C201LT1G is RoHS3 Compliant.

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