| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,800 pcs
|
20800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor NSTB60BDW1T1G is a versatile transistor combination comprising one NPN and one PNP transistor, designed to simplify circuit design and reduce component count. It operates with a collector-emitter voltage of up to 50V and can handle a continuous collector current of 150mA.
This device features a typical DC current gain (hFE) of 80 at 5mA/10V for one transistor and 120 for the other. Saturation voltages are specified at a maximum of 250mV at 5mA/10mA and 500mV at 5mA/50mA. The typical input resistor value is 47kΩ.
Packaged in a compact SOT-363 (SC-88/SC70-6) surface-mount case, the NSTB60BDW1T1G is supplied on tape and reel in standard quantities of 3000 units. It operates within a junction and storage temperature range of -55°C to +150°C. The device is Pb-Free and Halogen Free, meeting RoHS3 compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the NSTB60BDW1T1G is 50V.
The continuous collector current rating is 150mA.
The typical DC current gain (hFE) is 80 at 5mA/10V for one transistor and 120 at 5mA/10V for the other.
The operating temperature range is -55°C to +150°C.
The NSTB60BDW1T1G is in a SOT-363 package.
Yes, the NSTB60BDW1T1G is RoHS3 compliant.
The standard package quantity is 3000 units per reel.