| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
185,020 pcs
|
185020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NST857BDP6T5G from ON Semiconductor is a dual general-purpose PNP bipolar junction transistor (BJT) array. This device is designed for amplifier applications and is housed in a compact SOT-963 six-leaded surface mount package, making it ideal for low-power applications where board space is limited.
Key electrical characteristics include a collector-emitter voltage (VCEO) of -45V, a continuous collector current (IC) of -100mA, and a DC current gain (hFE) ranging from 220 to 475. The saturation voltage (VCEsat) is a maximum of 700mV at 5mA/100mA, and it operates at frequencies up to 100MHz. The device has a maximum power dissipation of 350mW at 25°C (dual heated).
This transistor array simplifies circuit design, reduces component count, and saves valuable board space. It operates within a junction and storage temperature range of -55°C to +150°C. The package is SOT-963, a surface mount type, supplied in tape and reel packaging with 8,000 units per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is -45 Vdc.
The continuous collector current is -100 mAdc.
The DC current gain (hFE) is a minimum of 220 at 2mA and 5V.
The operating temperature range is -55°C to +150°C.
This transistor is in a SOT-963 package.
The RoHS status is RoHS3 Compliant.