| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
72,000 pcs
|
72000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,020 pcs
|
9020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Power | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NST847BPDP6T5G from On Semiconductor is a dual complementary transistor array featuring both NPN and PNP transistors in a single SOT-963 package. This configuration is ideal for low-power surface mount applications where board space is limited, simplifying circuit design and reducing component count.
This device offers a Collector-Emitter Voltage (VCEO) of 45V and a continuous Collector Current (IC) of 100mA. It boasts a DC Current Gain (hFE) ranging from 200 to 450 and a low Vce(sat) of less than 0.3V. The operating temperature range is -55°C to 150°C.
The transistor array is supplied in a SOT-963 surface mount package, suitable for automated assembly processes. Its design makes it a versatile component for various general-purpose amplifier applications in compact electronic devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Breakdown Voltage (VCEO) is 45V for NPN and -45V for PNP.
The continuous Collector Current (IC) is 100 mAdc.
The operating temperature range is -55°C to 150°C (TJ).
The NST847BPDP6T5G is supplied in a SOT-963 package.
The power dissipation rating is 350mW when dual heated at TA = 25°C.