NST847BDP6T5G The ON Semiconductor NST847BDP6T5G is a dual NPN transistor designed for general purpose amplifier applications. It features a 45V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

NST847BDP6T5G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NST847BDP6T5G is a dual NPN transistor designed for general purpose amplifier applications. It features a 45V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 191,500 pcs
$ Price Range: $0.99

NST847BDP6T5G Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
185,020 pcs
185020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
6,480 pcs
6480 pcs On Request 1 On Request On Request On Request On Request On Request

NST847BDP6T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NST847BDP6T5G Description

Short technical summary and product information.

The ON Semiconductor NST847BDP6T5G is a dual general purpose NPN transistor housed in a compact SOT-963 surface mount package. This device is ideal for low-power applications where board space is limited, offering the benefit of two discrete transistors in a single package.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 45V and a continuous collector current (IC) of 100mA. The DC current gain (hFE) ranges from 200 to 450 at 2mA/5V, and the saturation voltage (VCE(sat)) is a maximum of 600mV at 5mA/100mA. It operates at frequencies up to 100MHz.

 

This transistor is designed for general purpose amplifier applications. Its integrated dual-device design simplifies circuit construction, reduces board space, and lowers component count. The operating temperature range is -55°C to 150°C (TJ), and it is supplied in a SOT-963 package suitable for surface mounting.

 

The device is RoHS3 compliant and operates within a junction and storage temperature range of -55°C to +150°C. It is available in an 8000/Tape & Reel package.

NST847BDP6T5G Quick Information

Product Type: Transistor
Canonical Name: NST847BDP6T5G Dual General Purpose Transistor
Subcategory: Transistor Arrays

NST847BDP6T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NST847BDP6T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NST847BDP6T5G Features

  • Dual NPN transistor in SOT-963 package.
  • 45V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • DC current gain (hFE) 200-450.
  • Low VCE(sat) of 600mV maximum.

NST847BDP6T5G Applications

  • Suitable for general purpose amplifiers.
  • Ideal for low-power applications.
  • Reduces board space and component count.
  • Designed for surface mount applications.

NST847BDP6T5G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the NST847BDP6T5G?

The collector-emitter voltage (VCEO) for the NST847BDP6T5G is 45 Vdc.

What is the continuous collector current for this transistor?

The continuous collector current (IC) is 100 mAdc.

What is the operating temperature range of the NST847BDP6T5G?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NST847BDP6T5G supplied in?

The NST847BDP6T5G is supplied in a SOT-963 package.

Is the NST847BDP6T5G RoHS compliant?

Yes, the NST847BDP6T5G is RoHS3 Compliant.

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