NST65010MW6T1G The On Semiconductor NST65010MW6T1G is a dual matched PNP transistor array designed for general-purpose applications. It offers a 65V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

NST65010MW6T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NST65010MW6T1G is a dual matched PNP transistor array designed for general-purpose applications. It offers a 65V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 7,020 pcs
$ Price Range: $0.99

NST65010MW6T1G Available from 1 distributor

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NST65010MW6T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NST65010MW6T1G Description

Short technical summary and product information.

The NST65010MW6T1G from On Semiconductor is a dual matched PNP transistor array housed in an ultra-small SOT-363 package, making it suitable for portable products.

 

This device features highly matched parameters, eliminating the need for costly trimming. Key electrical specifications include a collector-emitter voltage of -65V, a continuous collector current of -100mA, and a transition frequency of 100MHz. The DC current gain (hFE) is typically 220 at 2mA and 5V, with a maximum saturation voltage of 650mV at 10mA collector current and 0.5mA base current.

 

Designed for applications such as current mirrors, differential and balanced amplifiers, mixers, detectors, and limiters, this transistor array operates within a temperature range of -55°C to 150°C. The total power dissipation is rated at 380mW at 25°C ambient temperature.

 

The NST65010MW6T1G is Pb-free and Halogen-free, complying with RoHS standards. It is supplied in a 3000-piece tape and reel package, ideal for surface mount assembly.

NST65010MW6T1G Quick Information

Product Type: Transistor
Canonical Name: Dual Matched General Purpose PNP Transistor
Subcategory: Transistor Arrays

NST65010MW6T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NST65010MW6T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NST65010MW6T1G Features

  • Dual matched PNP transistor array.
  • Collector-Emitter Voltage: -65V.
  • Continuous Collector Current: -100mA.
  • Transition Frequency: 100MHz.
  • Ultra-small SOT-363 package.

NST65010MW6T1G Applications

  • Used in current mirror circuits.
  • Suitable for differential amplifiers.
  • Ideal for balanced amplifier designs.
  • Applicable in mixer circuits.
  • Used in detector and limiter circuits.

NST65010MW6T1G FAQs

4 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the NST65010MW6T1G transistor array?

The operating temperature range is -55°C to 150°C.

What is the maximum collector-emitter voltage for this transistor array?

The maximum collector-emitter voltage is -65V.

What is the continuous collector current rating?

The continuous collector current rating is -100mA.

What package type is the NST65010MW6T1G supplied in?

It is supplied in an SOT-363 package.

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