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624,000 pcs
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624000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor NST4617MX2T5G is an NPN bipolar junction transistor (BJT) suitable for general-purpose applications. This component features a collector-emitter voltage (VCEO) of 50V and can handle a continuous collector current (Ic) of up to 100mA. Its transition frequency (fT) is 112MHz, indicating its capability for high-frequency signal processing.
The transistor operates within a wide temperature range of -55°C to +150°C, making it suitable for demanding environments. The saturation voltage (VCE(sat)) is typically 400mV, and the power dissipation (Pd) is rated at 166mW. The package type is X2DFN-3(1x0.6), designed for surface mounting.
This NPN transistor is characterized by its DC current gain of 120 and a collector cutoff current of 500nA. Its robust specifications make it a reliable choice for amplification and switching circuits in electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the NST4617MX2T5G is 50V.
The maximum collector current (Ic) for the NST4617MX2T5G is 100mA.
The transition frequency (fT) of the NST4617MX2T5G is 112MHz.
The operating temperature range for the NST4617MX2T5G is -55°C to +150°C.
The NST4617MX2T5G comes in an X2DFN-3(1x0.6) package.
The DC current gain of the NST4617MX2T5G is 120.