| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,895 pcs
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3895 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The NST3906DXV6T1G from On Semiconductor is a dual PNP transistor array housed in a compact SOT-563 surface mount package. This device is a spin-off of popular SOT-23/SOT-323 transistors, offering two discrete devices in a single package, ideal for space-constrained low-power applications.
Key electrical characteristics include a collector-emitter voltage (VCEO) of -40V and a continuous collector current (IC) of -200mA. The DC current gain (hFE) ranges from 60 to 300 depending on the operating conditions. It also features a low collector-emitter saturation voltage (VCE(sat)) of up to -0.4V and a current-gain bandwidth product (fT) of 250MHz.
Designed for general-purpose amplifier applications, this transistor array simplifies circuit design, reduces board space, and lowers component count. The operating temperature range is -55°C to +150°C. The device is supplied in a SOT-563 package suitable for surface mounting.
Environmental compliance includes RoHS3 compliance and Moisture Sensitivity Level 1 (MSL 1). The device utilizes lead-free solder plating.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the NST3906DXV6T1G is -40 Vdc.
The continuous collector current (IC) for the NST3906DXV6T1G is -200 mAdc.
The typical DC current gain (hFE) is 100 at 10mA collector current and 1V collector-emitter voltage.
The operating and storage temperature range is -55°C to +150°C.
The NST3906DXV6T1G is supplied in a SOT-563 package.