| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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31,590 pcs
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31590 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NST3906DP6T5G from ON Semiconductor is a dual PNP transistor housed in a compact SOT-963 surface mount package. This device is a spin-off of popular three-leaded devices, offering two discrete transistors in a single package, making it ideal for low-power surface mount applications where board space is limited.
Key electrical characteristics include a collector-emitter voltage (VCEO) of -40V and a continuous collector current (IC) of -200mA. The DC current gain (hFE) ranges from 100 to 300 at 10mA and 1V, with a low Vce(sat) of 400mV at 5mA collector current and 50mA base current. The transistor operates at frequencies up to 250MHz.
Designed for general purpose amplifier applications, the NST3906DP6T5G simplifies circuit design, reduces board space, and lowers component count. The operating temperature range is -55°C to +150°C. The device is Pb-Free and comes in a SOT-963 package, suitable for surface mounting.
This transistor is designed for applications requiring space efficiency and dual PNP functionality. Its specifications make it suitable for various general-purpose amplification tasks in compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the NST3906DP6T5G is -40V.
The continuous collector current (IC) for the NST3906DP6T5G is -200mA.
The DC current gain (hFE) of the NST3906DP6T5G is a minimum of 100 at 10mA collector current and 1V collector-emitter voltage.
The operating temperature range for the NST3906DP6T5G is -55°C to +150°C.
The NST3906DP6T5G is supplied in a SOT-963 package.