NST3906DP6T5G The ON Semiconductor NST3906DP6T5G is a dual PNP transistor designed for general purpose amplifier applications. It features a 40V collector-emitter voltage and 200mA continuous collector current.
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NST3906DP6T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NST3906DP6T5G is a dual PNP transistor designed for general purpose amplifier applications. It features a 40V collector-emitter voltage and 200mA continuous collector current.
✓ Total Stock: 31,590 pcs
$ Price Range: $0.99

NST3906DP6T5G Available from 1 distributor

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NST3906DP6T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NST3906DP6T5G Description

Short technical summary and product information.

The NST3906DP6T5G from ON Semiconductor is a dual PNP transistor housed in a compact SOT-963 surface mount package. This device is a spin-off of popular three-leaded devices, offering two discrete transistors in a single package, making it ideal for low-power surface mount applications where board space is limited.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of -40V and a continuous collector current (IC) of -200mA. The DC current gain (hFE) ranges from 100 to 300 at 10mA and 1V, with a low Vce(sat) of 400mV at 5mA collector current and 50mA base current. The transistor operates at frequencies up to 250MHz.

 

Designed for general purpose amplifier applications, the NST3906DP6T5G simplifies circuit design, reduces board space, and lowers component count. The operating temperature range is -55°C to +150°C. The device is Pb-Free and comes in a SOT-963 package, suitable for surface mounting.

 

This transistor is designed for applications requiring space efficiency and dual PNP functionality. Its specifications make it suitable for various general-purpose amplification tasks in compact electronic designs.

NST3906DP6T5G Quick Information

Product Type: Dual PNP Transistor
Canonical Name: NST3906DP6T5G Dual PNP Transistor
Subcategory: Bipolar (BJT) - Arrays

NST3906DP6T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NST3906DP6T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NST3906DP6T5G Features

  • Dual PNP transistor in SOT-963 package.
  • 40V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • Low Vce(sat) of 400mV.
  • Wide operating temperature range.

NST3906DP6T5G Applications

  • Ideal for general purpose amplification.
  • Suitable for low-power applications.
  • Space-saving surface mount designs.
  • Reduces component count.

NST3906DP6T5G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the NST3906DP6T5G?

The collector-emitter voltage (VCEO) for the NST3906DP6T5G is -40V.

What is the continuous collector current of the NST3906DP6T5G?

The continuous collector current (IC) for the NST3906DP6T5G is -200mA.

What is the DC current gain (hFE) of the NST3906DP6T5G?

The DC current gain (hFE) of the NST3906DP6T5G is a minimum of 100 at 10mA collector current and 1V collector-emitter voltage.

What is the operating temperature range for this transistor?

The operating temperature range for the NST3906DP6T5G is -55°C to +150°C.

What package type is the NST3906DP6T5G supplied in?

The NST3906DP6T5G is supplied in a SOT-963 package.

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