NST30010MXV6T1G

The ON Semiconductor NST30010MXV6T1G is a dual PNP matched transistor array housed in an ultra-small SOT-563 package, making it ideal for portable applications. This device is assembled to create a pair of highly matched transistors, eliminating the need for costly trimming. Key electrical specifications include a Collector-Emitter Voltage (VCEO) of -30V and a continuous Collector Current (IC) of -100mA. The current gain (hFE) is typically 420 at 2mA and 5V, with a Vce Saturation of 600mV at 5mA and 100mA. It operates at frequencies up to 100MHz and has a power dissipation of 500mW.

Designed for applications such as current mirrors, differential, sense, and balanced amplifiers, mixers, detectors, and limiters, this transistor array offers excellent parameter matching. The operating temperature range is from -55°C to 150°C (TJ). The device is AEC-Q101 qualified and PPAP capable, with an NSV prefix for automotive and other applications requiring unique site and control change requirements. It is supplied in a SOT-563 package, surface mounted, and comes on tape and reel with a standard package quantity of 4,000 units.