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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-to-Emitter Saturation Voltage | |
| Breakdown Voltage (Minimum @ IC = -1 mA, RBE = ∞) | |
| Breakdown Voltage (Minimum @ IC = -10 µA, IE = 0 A) | |
| Breakdown Voltage (Minimum @ IE = -10 µA, IC = 0 A) | |
| Collector Current (Pulse) | |
| Current | |
| Current (Maximum) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Fall Time | |
| Frequency | |
| Gain-Bandwidth Product | |
| Halogen Free | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ PC (Note 1) | |
| Power Dissipation (Maximum @ PC (Note 2) | |
| Power Dissipation (Maximum) | |
| Storage Temperature | |
| Storage Time | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Turn On Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ IC = -250 mA, IB = -25 mA) | |
| Vce Saturation (Maximum @ IC = -250 mA, IB = -50 mA) | |
| Vce Saturation (Maximum @ Ib = 50 mA, Ic = 500 mA) | |
| Vce Saturation (Maximum @ Ic=500 mA, Ib=50 mA) | |
| Voltage | |
| Voltage - Maximum | |
| hFE (Minimum @ IC =100 mA, VCE =5 V) | |
| hFE (Minimum/Maximum @ Vce = 5 V, Ic = 100 mA) | |
| hfe (Minimum @ VCE = -5 V, IC = -500 mA) |
The ON Semiconductor NST1601CLTWG is a PNP bipolar junction transistor (BJT) designed for applications requiring high current handling, low saturation voltage, and high-speed switching. It features a collector-emitter voltage (VCEO) of -160 V and a continuous collector current (IC) of -1.5 A.
This device is suitable for automotive applications and is AEC-Q101 qualified and PPAP capable. The transistor operates with a junction temperature up to 175°C and has a collector dissipation of up to 2.2 W when mounted on a suitable PCB.
Key electrical characteristics include a DC current gain (hFE) ranging from 140 to 280 at 100 mA and 5 V, a gain-bandwidth product (fT) of 87 MHz, and low saturation voltages such as VCE(sat) of 0.2 V maximum at 500 mA collector current and 50 mA base current.
The NST1601CLTWG is housed in a compact 8-LFPAK package, measuring 3.3 x 3.3 mm with a 0.65 mm pitch, making it suitable for surface-mount applications where space is a constraint. Its high-speed switching characteristics, with turn-on times of 50 ns, storage times of 1150 ns, and fall times of 40 ns, make it ideal for load switching and DC-DC converter designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NST1601CLTWG is -160 V.
The continuous collector current (IC) rating for the NST1601CLTWG is -1.5 A.
The typical DC current gain (hFE) at 100mA and 5V is 140.
This transistor is supplied in an 8-LFPAK package.
The operating junction temperature (TJ) for this device is up to 175°C.
Yes, this device is RoHS3 compliant.