NSS60601MZ4T1G The ON Semiconductor NSS60601MZ4T1G is an NPN transistor designed for low voltage, high speed switching applications. It features a 60V collector-emitter voltage and 6A continuous collector current in a SOT-223 package.
Mfr Part #:

NSS60601MZ4T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSS60601MZ4T1G is an NPN transistor designed for low voltage, high speed switching applications. It features a 60V collector-emitter voltage and 6A continuous collector current in a SOT-223 package.
Total Stock: 10,689 pcs
$ Price Range: $0.99

NSS60601MZ4T1G Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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9,020 pcs
9020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,669 pcs
1669 pcs On Request 1 On Request On Request On Request On Request On Request

NSS60601MZ4T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Lead Spacing
Mounting Type
Operating Temperature
Power
Supplier Device Package
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSS60601MZ4T1G Description

Short technical summary and product information.

The ON Semiconductor NSS60601MZ4T1G is an NPN bipolar junction transistor (BJT) from the e 2PowerEdge family, designed for efficient energy control in low voltage, high speed switching applications. It offers a low VCE(sat) and high current gain capability.

 

Key electrical specifications include a maximum collector-emitter voltage of 60V, a continuous collector current of 6A, and a peak collector current of 12A. The transistor has a DC current gain (hFE) of 120 minimum at 1A and 2V, and a Vce saturation of 300mV maximum at 600mA and 6A. Its frequency response reaches up to 100MHz.

 

This device is housed in a SOT-223 (TO-261AA) surface mount package, suitable for automated assembly. It operates across a wide temperature range from -55°C to 150°C (TJ).

 

The NSS60601MZ4T1G is Pb-free, Halogen Free/BFR Free, and RoHS compliant. Its complementary part is the NSS60600MZ4. Typical applications include DC-DC converters, power management in portable devices, and low voltage motor controls.

NSS60601MZ4T1G Quick Information

Product Type: NPN Transistor
Canonical Name: NPN Low VCE(sat) Transistor, 60 V, 6.0 A
Subcategory: Bipolar (BJT) - Single

NSS60601MZ4T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSS60601MZ4T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSS60601MZ4T1G Features

  • NPN transistor for low voltage switching.
  • 60V collector-emitter voltage rating.
  • 6A continuous collector current.
  • Low VCE(sat) and high current gain.
  • SOT-223 surface mount package.

NSS60601MZ4T1G Applications

  • Used in DC-DC converters.
  • Power management in portable products.
  • Low voltage motor controls.
  • Automotive applications.

NSS60601MZ4T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSS60601MZ4T1G?

The maximum collector-emitter voltage is 60Vdc.

What is the continuous collector current rating?

The continuous collector current is 6A.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NSS60601MZ4T1G supplied in?

It is supplied in a SOT-223 (TO-261) package.

Is the NSS60601MZ4T1G RoHS compliant?

Yes, it is RoHS3 Compliant.

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