NSS60600MZ4T3G The ON Semiconductor NSS60600MZ4T3G is a PNP bipolar junction transistor designed for low voltage, high speed switching applications. It features a 60V collector-emitter voltage and 6A continuous current.
Mfr Part #:

NSS60600MZ4T3G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSS60600MZ4T3G is a PNP bipolar junction transistor designed for low voltage, high speed switching applications. It features a 60V collector-emitter voltage and 6A continuous current.
Total Stock: 36,020 pcs
$ Price Range: $0.99

NSS60600MZ4T3G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
21,020 pcs
21020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
15,000 pcs
15000 pcs On Request 1 On Request On Request On Request On Request On Request

NSS60600MZ4T3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Junction and Storage Temperature Range
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Thermal Resistance (Nominal @ @ TA = +25 °C)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSS60600MZ4T3G Description

Short technical summary and product information.

The ON Semiconductor NSS60600MZ4T3G is a PNP low VCE(sat) transistor from the e2PowerEdge family. It is designed for low voltage, high speed switching applications where efficient energy control is important. This device offers a collector-emitter voltage of 60V and a continuous collector current of 6A.

 

Key electrical characteristics include a Vce saturation of 350mV at 600mA/6A and a DC current gain (hFE) of 120 minimum at 1A/2V. The transistor operates at frequencies up to 100MHz.

 

Packaged in a SOT-223 (TO-261) surface mount package, the NSS60600MZ4T3G is suitable for various power management and DC-DC converter applications in portable and battery-powered products. It is also RoHS compliant, Pb-free, and Halogen-free.

 

Typical applications include DC-DC converters, power management in portable devices like phones and PDAs, low voltage motor controls, and automotive applications such as airbag deployment and instrument clusters.

NSS60600MZ4T3G Quick Information

Product Type: PNP Transistor
Canonical Name: NSS60600MZ4T3G PNP Low VCE(sat) Transistor, 60 V, 6.0 A
Subcategory: Bipolar (BJT) - Single

NSS60600MZ4T3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSS60600MZ4T3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSS60600MZ4T3G Features

  • PNP transistor for low voltage switching.
  • 60V collector-emitter voltage rating.
  • 6A continuous collector current.
  • Low Vce saturation of 350mV maximum.
  • SOT-223 surface mount package.

NSS60600MZ4T3G Applications

  • Used in DC-DC converters.
  • Power management in portable devices.
  • Low voltage motor control applications.
  • Automotive airbag deployment systems.
  • Instrument cluster applications.

NSS60600MZ4T3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSS60600MZ4T3G?

The maximum collector-emitter voltage (VCEO) is -60 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) is -6.0 A.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C (TJ).

What package type is the NSS60600MZ4T3G supplied in?

It is supplied in a SOT-223 (TO-261) surface mount package.

Is this transistor RoHS compliant?

Yes, this device is RoHS3 Compliant.

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