| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NSS60101DMR6T1G from On Semiconductor is a dual NPN bipolar transistor array. It is designed for applications requiring a breakdown voltage of up to 60V and a maximum collector current of 1A.
Key electrical specifications include a Vce saturation of 250mV at 50mA and 1A, a DC current gain (hFE) of 250 minimum at 100mA and 5V, and a transition frequency of 200MHz. The device has a maximum power dissipation of 400mW.
This transistor array is housed in a surface mount SC-74, SOT-457 package, making it suitable for compact electronic designs. It operates within a temperature range of -55°C to 150°C (TJ).
The RoHS status is reported as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited. The REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage for the NSS60101DMR6T1G is 60V.
The maximum collector current for the NSS60101DMR6T1G is 1A.
The operating temperature range is -55°C to 150°C (TJ).
The NSS60101DMR6T1G is a dual NPN bipolar transistor array.
The NSS60101DMR6T1G is available in a SC-74, SOT-457 package.