NSS40600CF8T1G The ON Semiconductor NSS40600CF8T1G is a PNP bipolar junction transistor designed for low voltage, high speed switching applications. It features low saturation voltage and high current gain.
Mfr Part #:

NSS40600CF8T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSS40600CF8T1G is a PNP bipolar junction transistor designed for low voltage, high speed switching applications. It features low saturation voltage and high current gain.
Total Stock: 6,000 pcs
$ Price Range: $0.99

NSS40600CF8T1G Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request On Request

NSS40600CF8T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Junction and Storage Temperature Range
Lead Style
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSS40600CF8T1G Description

Short technical summary and product information.

The ON Semiconductor NSS40600CF8T1G is a PNP transistor from the e2PowerEdge family, designed for efficient energy control in low voltage applications. It offers ultra-low saturation voltage (VCE(sat)) and high current gain capability, making it suitable for high-speed switching.

 

Key electrical specifications include a collector-emitter voltage of -40 Vdc and a continuous collector current of -6 Adc, with a peak current of -7 A. The device exhibits a DC current gain (hFE) of 220 minimum at 1A and 2V, and a Vce saturation of 220mV maximum at 400mA and 4A. It operates at frequencies up to 100MHz.

 

This transistor is housed in a ChipFET™ package, a miniature surface mount device, with a total power dissipation of 830 mW at 25°C ambient temperature. The operating temperature range is -55°C to 150°C. It is supplied in tape and reel packaging with 3,000 units per reel.

 

Typical applications include DC-DC converters, power management in portable devices like phones and PDAs, and low voltage motor controls. The 'S' prefix indicates suitability for automotive applications requiring AEC-Q101 qualification.

NSS40600CF8T1G Quick Information

Product Type: Transistor
Canonical Name: PNP Low VCE(sat) Transistor
Subcategory: Single

NSS40600CF8T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NSS40600CF8T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSS40600CF8T1G Features

  • Low VCE(sat) PNP transistor
  • 40 V collector-emitter voltage
  • 6 A continuous collector current
  • Surface mount ChipFET™ package
  • Suitable for high-speed switching

NSS40600CF8T1G Applications

  • Used in DC-DC converters
  • Power management for portable devices
  • Low voltage motor controls
  • Automotive applications

NSS40600CF8T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSS40600CF8T1G?

-40 Vdc

What is the continuous collector current rating?

-6 A

What is the operating temperature range?

-55°C ~ 150°C

What type of transistor is the NSS40600CF8T1G?

PNP

What package is the NSS40600CF8T1G supplied in?

ChipFET™

How is the NSS40600CF8T1G mounted?

Surface Mount

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