NSS40302PDR2G The ON Semiconductor NSS40302PDR2G is a complementary NPN/PNP bipolar transistor designed for low voltage, high speed switching applications. It features a 40V collector-emitter voltage and 3A continuous collector current.
Mfr Part #:

NSS40302PDR2G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSS40302PDR2G is a complementary NPN/PNP bipolar transistor designed for low voltage, high speed switching applications. It features a 40V collector-emitter voltage and 3A continuous collector current.
✓ Total Stock: 118,601 pcs
$ Price Range: $0.99

NSS40302PDR2G Available from 3 distributors

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NSS40302PDR2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Lead Spacing
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSS40302PDR2G Description

Short technical summary and product information.

The ON Semiconductor NSS40302PDR2G is a complementary NPN and PNP bipolar transistor from the e2PowerEdge family, designed for low voltage, high speed switching applications. It offers ultra-low saturation voltage (VCE(sat)) and high current gain capability.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 40V for NPN and -40V for PNP, and a continuous collector current (IC) of 3A for NPN and -3A for PNP. The device operates at a frequency (fT) of 100MHz and has a minimum DC current gain (hFE) of 180 at 1A, 2V. The Vce saturation is a maximum of 115mV at 200mA, 2A.

 

This transistor is housed in a compact 8-SOIC (0.154", 3.90mm Width) surface mount package. It is designed for applications such as low voltage motor controls in mass storage products, and automotive uses like airbag deployment and instrument clusters. The high current gain allows direct driving from PMU control outputs, and its linear gain makes it suitable for analog amplifiers.

 

The NSS40302PDR2G is AEC-Q101 qualified and RoHS compliant, making it suitable for automotive and other demanding applications. It operates across a wide temperature range of -55°C to 150°C (TJ).

NSS40302PDR2G Quick Information

Product Type: Bipolar Transistor
Series: NSS40302P
Canonical Name: Complementary NPN/PNP Low VCE(sat) Transistor
Subcategory: BJT Arrays

NSS40302PDR2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSS40302PDR2G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSS40302PDR2G Features

  • Complementary NPN and PNP transistor configuration.
  • Rated for 40V collector-emitter voltage.
  • Handles up to 3A continuous collector current.
  • Operates at 100MHz gain bandwidth product.
  • Surface mount 8-SOIC package for compact designs.

NSS40302PDR2G Applications

  • Used in low voltage motor controls.
  • Suitable for mass storage products.
  • Applied in automotive airbag systems.
  • Can be used in instrument clusters.
  • Ideal for high-speed switching circuits.

NSS40302PDR2G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSS40302PDR2G transistor?

The maximum collector-emitter voltage (VCEO) is 40V for the NPN type and -40V for the PNP type.

What is the continuous collector current rating?

The continuous collector current (IC) is 3A for the NPN type and -3A for the PNP type.

What is the operating temperature range for this transistor?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NSS40302PDR2G supplied in?

This transistor is supplied in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

Is the NSS40302PDR2G RoHS compliant?

Yes, the device is RoHS3 Compliant.

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