| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,602 pcs
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10602 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NSS40300DDR2G is a dual PNP bipolar transistor from the e2PowerEdge family, designed for low voltage, high speed switching applications where efficient energy control is important. It offers ultra-low saturation voltage and high current gain capability.
Key electrical specifications include a maximum collector-emitter voltage of -40Vdc, a continuous collector current of -3.0A, and a peak collector current of -6.0A. The saturation voltage is a maximum of 170mV at 200mA/2A, and the DC current gain (hFE) is a minimum of 180 at 1A/2V. The device operates at a frequency up to 100MHz.
This transistor is housed in an 8-SOIC package with surface mount mounting type. It operates within a temperature range of -55°C to 150°C. The device is Pb-Free and Halide Free, indicating compliance with environmental standards.
Typical applications include low voltage motor controls in mass storage products like disc drives and tape drives, as well as automotive applications such as air bag deployment and instrument clusters. Its high current gain allows it to be driven directly from PMU control outputs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is -40 Vdc.
The continuous collector current is -3.0 A.
The peak collector current is -6.0 A.
The saturation voltage is a maximum of 170mV at 200mA, 2A.
The minimum DC current gain (hFE) is 180 at 1A, 2V.
The operating temperature range is -55°C to 150°C.
The NSS40300DDR2G is supplied in an 8-SOIC package.
Yes, this component is RoHS3 Compliant.
Yes, this component is Halide Free.