NSS40200UW6T1G The On Semiconductor NSS40200UW6T1G is a PNP bipolar junction transistor designed for low voltage, high speed switching applications. It features low saturation voltage and high current gain.
Mfr Part #:

NSS40200UW6T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSS40200UW6T1G is a PNP bipolar junction transistor designed for low voltage, high speed switching applications. It features low saturation voltage and high current gain.
Total Stock: 14,990 pcs
$ Price Range: $0.99

NSS40200UW6T1G Available from 1 distributor

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NSS40200UW6T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Lead Spacing
Mounting Type
Operating Temperature
Operating Temperature (Minimum/Maximum)
Pb-Free
Power
Power Dissipation (Maximum @ Notes 2 & 3)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Thermal Resistance (Maximum @ Note 1)
Thermal Resistance (Maximum)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSS40200UW6T1G Description

Short technical summary and product information.

The On Semiconductor NSS40200UW6T1G is a PNP low VCE(sat) transistor in the e2PowerEdge family. It is designed for low voltage, high speed switching applications where efficient energy control is important.

 

Key electrical specifications include a maximum collector-emitter voltage of -40V and a continuous collector current of -2.0A. It offers a high current gain (hFE) of 150 minimum at 1A, 2V, and a Vce saturation of 300mV maximum at 20mA, 2A. The device operates at frequencies up to 140MHz.

 

This transistor is suitable for applications such as DC-DC converters and power management in portable and battery-powered products. Other uses include low voltage motor controls, automotive air bag deployment, and instrument clusters. Its high current gain allows it to be driven directly from PMU control outputs.

 

The NSS40200UW6T1G is housed in a 6-WDFN exposed pad surface mount package. It operates within a temperature range of -55°C to 150°C.

NSS40200UW6T1G Quick Information

Product Type: PNP Transistor
Canonical Name: On Semiconductor NSS40200UW6T1G PNP Low VCE(sat) Transistor
Subcategory: PNP

NSS40200UW6T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSS40200UW6T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSS40200UW6T1G Features

  • PNP low VCE(sat) transistor.
  • Rated for 40V collector-emitter voltage.
  • Handles 2A continuous collector current.
  • Surface mount 6-WDFN package.
  • Operates from -55°C to 150°C.

NSS40200UW6T1G Applications

  • Used in DC-DC converters.
  • Power management in portable devices.
  • Low voltage motor controls.
  • Automotive instrument clusters.
  • Analog amplifier circuits.

NSS40200UW6T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSS40200UW6T1G?

The maximum collector-emitter voltage is -40 Vdc.

What is the continuous collector current rating?

The continuous collector current is -2.0 Adc.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the NSS40200UW6T1G supplied in?

It is supplied in a 6-WDFN Exposed Pad package.

What is the minimum DC current gain (hFE)?

The minimum DC current gain is 150 at 1A, 2V.

What is the Vce saturation voltage?

The Vce saturation is 300mV maximum at 20mA, 2A.

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