NSS40200LT1G

The ON Semiconductor NSS40200LT1G is a PNP bipolar transistor from the e2PowerEdge family, characterized by its low saturation voltage (VCE(sat)) and high current gain capability. This device is designed for efficient energy control in low voltage, high speed switching applications.

Key electrical specifications include a collector-emitter voltage (VCEO) of -40 Vdc, a continuous collector current (IC) of 2 A, and a peak collector current (ICM) of -4.0 A. The saturation voltage (Vce Sat) is a maximum of 170mV at 200mA collector current and 2A collector current. The DC current gain (hFE) is a minimum of 220 at 500mA collector current and 2V collector-emitter voltage, with a gain bandwidth product (fT) of 100 MHz.

This transistor operates within a junction and storage temperature range of -55°C to +150°C. It is housed in a compact SOT-23-3 (TO-236-3) surface mount package, making it suitable for space-constrained designs. The device is also noted for being Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

Typical applications include DC-DC converters, power management in portable and battery-powered products, and low voltage motor controls. Its high current gain allows it to be driven directly from PMU control outputs, and its linear gain makes it suitable for analog amplifiers.