NSS35200CF8T1G

The NSS35200CF8T1G from ON Semiconductor is a PNP transistor belonging to the e²PowerEdge family, known for its low VCE(sat) and high current gain capability. This miniature surface mount device is engineered for efficient energy control in low voltage, high speed switching applications.

Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of -35 Vdc and a continuous Collector Current (IC) of -2.0 Adc, with a peak current capability of -7.0 A. The transistor offers a typical DC Current Gain (hFE) of 100 at 1.5A and 2V, and a Vce Saturation of 300mV at 20mA and 2A. Its operating frequency reaches up to 100MHz.

Designed for applications such as DC-DC converters and power management in portable and battery-powered devices, it is also suitable for low voltage motor controls. The device operates within a junction and storage temperature range of -55°C to +150°C. It is housed in a ChipFET™ package, a surface mount type with 8 leads, designed for efficient thermal management with a total device dissipation of 635 mW at 25°C (Note 1).

This component is Pb-Free, indicating compliance with environmental standards. Its robust design and performance metrics make it a suitable choice for power management solutions where efficiency and space are critical.