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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,431 pcs
|
2431 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The NSS30101LT1G from ON Semiconductor is a single NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a maximum collector-emitter voltage of 30V and a continuous collector current rating of 1A. It offers a DC current gain (hFE) of 300 at 500mA and 5V, with a maximum collector-emitter saturation voltage of 200mV at 100mA and 1A. The transistor operates at a transition frequency of 100MHz and has a power dissipation of 310mW.
With an operating temperature range of -55°C to 150°C (TJ), the NSS30101LT1G is suitable for a variety of environmental conditions. The surface mount configuration simplifies integration into printed circuit boards using standard reflow soldering processes. Its specifications make it a viable option for power management, signal switching, and other electronic circuit designs requiring a reliable NPN transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the NSS30101LT1G transistor is 30V.
The maximum continuous collector current for the NSS30101LT1G is 1A.
The DC current gain (hFE) of the NSS30101LT1G is a minimum of 300 at 500mA collector current and 5V collector-emitter voltage.
The operating temperature range for the NSS30101LT1G is -55°C to 150°C (TJ).
The NSS30101LT1G is available in a SOT-23-3 package.
The NSS30101LT1G is designed for surface mount.