NSS30101LT1G The On Semiconductor NSS30101LT1G is an NPN bipolar junction transistor designed for surface mount applications. It features a 30V collector-emitter voltage and 1A continuous collector current.
Mfr Part #:

NSS30101LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSS30101LT1G is an NPN bipolar junction transistor designed for surface mount applications. It features a 30V collector-emitter voltage and 1A continuous collector current.
Total Stock: 2,431 pcs
$ Price Range: $0.99

NSS30101LT1G Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,431 pcs
2431 pcs On Request 1 On Request On Request 17+ On Request On Request

NSS30101LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSS30101LT1G Description

Short technical summary and product information.

The NSS30101LT1G from ON Semiconductor is a single NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs.

 

Key electrical characteristics include a maximum collector-emitter voltage of 30V and a continuous collector current rating of 1A. It offers a DC current gain (hFE) of 300 at 500mA and 5V, with a maximum collector-emitter saturation voltage of 200mV at 100mA and 1A. The transistor operates at a transition frequency of 100MHz and has a power dissipation of 310mW.

 

With an operating temperature range of -55°C to 150°C (TJ), the NSS30101LT1G is suitable for a variety of environmental conditions. The surface mount configuration simplifies integration into printed circuit boards using standard reflow soldering processes. Its specifications make it a viable option for power management, signal switching, and other electronic circuit designs requiring a reliable NPN transistor.

NSS30101LT1G Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: NPN Bipolar Junction Transistor
Subcategory: Single

NSS30101LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSS30101LT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSS30101LT1G Features

  • NPN bipolar junction transistor.
  • 30V collector-emitter voltage rating.
  • 1A continuous collector current.
  • SOT-23-3 surface mount package.
  • Wide operating temperature range.

NSS30101LT1G Applications

  • General purpose switching applications.
  • Signal amplification circuits.
  • Power management designs.
  • Space-constrained electronic devices.

NSS30101LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the NSS30101LT1G transistor?

The collector-emitter voltage for the NSS30101LT1G transistor is 30V.

What is the maximum continuous collector current of the NSS30101LT1G?

The maximum continuous collector current for the NSS30101LT1G is 1A.

What is the DC current gain (hFE) of the NSS30101LT1G?

The DC current gain (hFE) of the NSS30101LT1G is a minimum of 300 at 500mA collector current and 5V collector-emitter voltage.

What is the operating temperature range for the NSS30101LT1G?

The operating temperature range for the NSS30101LT1G is -55°C to 150°C (TJ).

What package type is the NSS30101LT1G available in?

The NSS30101LT1G is available in a SOT-23-3 package.

How is the NSS30101LT1G mounted?

The NSS30101LT1G is designed for surface mount.

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