NSS30100LT1G The NSS30100LT1G is a PNP bipolar junction transistor from On Semiconductor. It offers a 30V collector-emitter voltage and a 1A continuous current rating.
Mfr Part #:

NSS30100LT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSS30100LT1G is a PNP bipolar junction transistor from On Semiconductor. It offers a 30V collector-emitter voltage and a 1A continuous current rating.
Total Stock: 39,140 pcs
$ Price Range: $0.99

NSS30100LT1G Available from 3 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
30,000 pcs
30000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
8,140 pcs
8140 pcs On Request 1 On Request On Request 1234+ On Request On Request
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1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

NSS30100LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector - Emitter Saturation Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Operating Temperature (Minimum/Maximum)
Power
Power Dissipation (Maximum)
Reverse Voltage (Maximum)
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSS30100LT1G Description

Short technical summary and product information.

The NSS30100LT1G is a low Vce(sat) PNP transistor manufactured by On Semiconductor. This component is designed for surface mount applications and comes in a compact SOT-23-3 package.

 

Key electrical characteristics include a maximum collector-emitter voltage of 30V and a continuous collector current of 1A. It operates at frequencies up to 100MHz. The transistor exhibits a low collector-emitter saturation voltage of -650mV at 2A collector current and 200mA base current, making it suitable for applications requiring efficient switching.

 

With a maximum power dissipation of 710mW and an operating temperature range from -55°C to 150°C, the NSS30100LT1G is built for reliable performance in various environments. The SOT-23-3 (TO-236) package is ideal for space-constrained designs.

 

This transistor is classified under the Bipolar (BJT) - Single category, suitable for general-purpose amplification and switching tasks in electronic circuits.

NSS30100LT1G Quick Information

Product Type: PNP Transistor
Canonical Name: NSS30100LT1G Low Vce(sat) PNP Transistor
Subcategory: Bipolar (BJT) - Single

NSS30100LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSS30100LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSS30100LT1G Features

  • Low Vce(sat) PNP transistor
  • 30V collector-emitter voltage rating
  • 1A continuous collector current
  • 100MHz operating frequency
  • SOT-23-3 surface mount package

NSS30100LT1G Applications

  • Suitable for general amplification tasks
  • Used in low power switching circuits
  • Ideal for space-constrained designs
  • Applications requiring efficient switching

NSS30100LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSS30100LT1G?

The maximum collector-emitter voltage is 30V.

What is the continuous collector current rating?

The continuous collector current rating is 1A.

What is the operating frequency of this transistor?

The operating frequency is 100MHz.

What is the saturation voltage at specified conditions?

The collector emitter saturation voltage is -650mV at 2A collector current and 200mA base current.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the NSS30100LT1G supplied in?

It is supplied in a SOT-23-3 (TO-236) package for surface mounting.

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