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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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171,000 pcs
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171000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Pb-Free | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor NSS30070MR6T1G is a PNP transistor from the e2PowerEdge family, designed for efficient energy control in low voltage, high speed switching applications. It features ultra-low saturation voltage (VCE(sat)) and high current gain capability.
Key electrical specifications include a maximum collector-emitter voltage of 30V and a maximum collector current of 0.7A. The DC current gain (hFE) is a minimum of 150 at 100mA and 3V. The VCE(sat) is a maximum of 400mV at 70mA and 700mA.
This device is suitable for applications such as DC-DC converters and power management in portable and battery-powered products like cellular phones, PDAs, and digital cameras. It can also be used in low voltage motor controls for mass storage products and in automotive applications like airbag deployment.
The transistor is housed in a miniature surface mount SC-74 package, also known as SOT-457, with a total power dissipation of 342 mW at 25°C. The operating temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 30 V.
The maximum collector current is 0.7 A.
The VCE saturation is a maximum of 400mV at 70mA and 700mA.
The DC current gain (hFE) is a minimum of 150 at 100mA and 3V.
The NSS30070MR6T1G is a PNP transistor.
The power dissipation is 342 mW at 25°C.
The operating temperature range is -55°C to 150°C.
The NSS30070MR6T1G is supplied in an SC-74 package.
The NSS30070MR6T1G is a surface mount device.