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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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72,000 pcs
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72000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation (Maximum @ TA = 25 °C, Note 2) | |
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The ON Semiconductor NSS20201MR6T1G is a miniature surface mount NPN transistor from the e²PowerEdge family, offering low VCE(sat) and high current gain. It is designed for low voltage, high speed switching applications where efficient energy control is important.
Key electrical specifications include a maximum collector-emitter voltage of 20V and a continuous collector current of 2A. The device offers a typical gain bandwidth product of 200MHz and a low collector-emitter saturation voltage of 150mV at 100mA collector current and 1A collector current. The maximum power dissipation is rated at 460mW at 25°C ambient temperature.
This transistor is suitable for applications such as DC-DC converters and power management in portable and battery-powered products like cellular phones, PDAs, and digital cameras. Other applications include low voltage motor controls in mass storage products and automotive systems.
The NSS20201MR6T1G is housed in a 6-TSOP package, designed for surface mounting. It operates across a wide temperature range from -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 20V.
The continuous collector current rating is 2A.
The power dissipation is 460mW at 25°C ambient temperature.
The operating temperature range is -55°C to 150°C.
It is supplied in a 6-TSOP package for surface mounting.
The typical gain bandwidth product is 200MHz.
The collector-emitter saturation voltage is a maximum of 150mV at 100mA collector current and 1A collector current.