| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,140 pcs
|
17140 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The ON Semiconductor NSS20101JT1G is a miniature surface mount NPN transistor from the e2PowerEdge family. It is designed for low voltage, high speed switching applications where efficient energy control is important. This device features ultra low saturation voltage (VCE(sat)) and high current gain capability.
Key electrical specifications include a Collector-Emitter Voltage (VCEO) of 20 Vdc and a continuous Collector Current (IC) of 1.0 A. The transistor also offers a peak collector current (ICM) of 2.0 A. Thermal characteristics include a maximum total device dissipation of 255 mW at 25°C ambient temperature, with a thermal resistance of 490 °C/W.
Typical applications for the NSS20101JT1G include DC-DC converters and power management in portable and battery-powered products such as cellular phones, PDAs, and digital cameras. It is also suitable for low voltage motor controls in mass storage products and automotive applications like airbag deployment. The AEC-Q101 qualification makes it suitable for automotive use.
The NSS20101JT1G is supplied in an SC-89 package, designed for surface mounting. It is shipped in tape and reel packaging with a standard quantity of 3,000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter voltage (VCEO) is 20 Vdc.
The continuous Collector Current (IC) rating is 1.0 A.
The NSS20101JT1G is available in the SC-89 package.
The standard package quantity is 3,000 units on tape and reel.
Yes, the NSS20101JT1G is AEC-Q101 qualified.