NSS1C201MZ4T3G The On Semiconductor NSS1C201MZ4T3G is an NPN Bipolar Junction Transistor with a 100V collector-emitter voltage and 2A continuous collector current. It is housed in a SOT-223 package.
Mfr Part #:

NSS1C201MZ4T3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSS1C201MZ4T3G is an NPN Bipolar Junction Transistor with a 100V collector-emitter voltage and 2A continuous collector current. It is housed in a SOT-223 package.
Total Stock: 17,000 pcs
$ Price Range: $0.99

NSS1C201MZ4T3G Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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17,000 pcs
17000 pcs On Request 1 On Request On Request 24+ On Request On Request

NSS1C201MZ4T3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current - Continuous
Collector Current - Peak
Collector Current Cutoff
Collector-Base Voltage
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Halogen Free
Junction and Storage Temperature Range
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation Total (Typical @ TA = 25 °C)
Supplier Device Package
Supplier Package
Tape & Reel
Thermal Resistance Junction Ambient (Typical @ Note 1)
Thermal Resistance Junction Ambient (Typical @ Note 2)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSS1C201MZ4T3G Description

Short technical summary and product information.

The NSS1C201MZ4T3G from On Semiconductor is a low VCE(sat) NPN transistor designed for low voltage, high speed switching applications. It features a maximum collector-emitter voltage of 100V and a continuous collector current of 2A.

 

This transistor offers a low saturation voltage of 180mV at 200mA collector current and 2A collector current, with a minimum DC current gain (hFE) of 120 at 500mA collector current and 2V collector-emitter voltage. Its operating frequency reaches up to 100MHz.

 

The device is suitable for power management in portable and battery-powered products, DC-DC converters, and low voltage motor controls. It is packaged in a SOT-223 (TO-261) surface mount package.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 100V, a continuous collector current of 2A, and a Vce saturation of 180mV at 200mA, 2A. The operating temperature range is -55°C to 150°C.

NSS1C201MZ4T3G Quick Information

Product Type: NPN Bipolar Junction Transistor
Canonical Name: NPN Bipolar Junction Transistor
Subcategory: Single

NSS1C201MZ4T3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSS1C201MZ4T3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSS1C201MZ4T3G Features

  • 100V collector-emitter voltage rating.
  • 2A continuous collector current capability.
  • Low VCE(sat) for efficient switching.
  • Surface mount SOT-223 package.
  • Wide operating temperature range.

NSS1C201MZ4T3G Applications

  • Used in DC-DC converters.
  • Power management in portable devices.
  • Low voltage motor control applications.
  • High speed switching circuits.

NSS1C201MZ4T3G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSS1C201MZ4T3G?

The maximum collector-emitter voltage is 100 Vdc.

What is the continuous collector current of the NSS1C201MZ4T3G transistor?

The continuous collector current is 2 A.

What is the saturation voltage (Vce Sat) for the NSS1C201MZ4T3G?

The Vce saturation is 180mV at 200mA collector current and 2A collector current.

What is the package type for the NSS1C201MZ4T3G?

The package type is SOT-223 (TO-261).

What is the operating temperature range for this transistor?

The operating temperature range is -55°C to 150°C.

Is the NSS1C201MZ4T3G RoHS compliant?

Yes, the device is RoHS3 Compliant.

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