NSS1C200MZ4T1G The NSS1C200MZ4T1G is a PNP transistor from On Semiconductor designed for low voltage, high speed switching applications. It features a low VCE(sat) and high current gain.
Mfr Part #:

NSS1C200MZ4T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSS1C200MZ4T1G is a PNP transistor from On Semiconductor designed for low voltage, high speed switching applications. It features a low VCE(sat) and high current gain.
Total Stock: 32,000 pcs
$ Price Range: $0.99

NSS1C200MZ4T1G Available from 1 distributor

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NSS1C200MZ4T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage Maximum
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Junction and Storage Temperature Range
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Thermal Resistance (Maximum @ Junction-to-Ambient (Note 2)
Thermal Resistance (Maximum @ Junction-to-Ambient, Note 1)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ Peak)

NSS1C200MZ4T1G Description

Short technical summary and product information.

The NSS1C200MZ4T1G is a PNP transistor from On Semiconductor's e2PowerEdge family, designed for efficient energy control in low voltage, high speed switching applications. It offers ultra low saturation voltage (VCE(sat)) and high current gain capability, allowing it to be driven directly from PMU control outputs.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of -100V, a continuous collector current (IC) of 2A, and a peak collector current (ICM) of 3A. The DC current gain (hFE) is a minimum of 120 at 500mA and 2V, with a Vce saturation of a maximum of 220mV at 200mA and 2A. The operating frequency is 120MHz.

 

This transistor is housed in a SOT-223 (TO-261) surface mount package. It operates within a junction and storage temperature range of -55°C to +150°C. Typical applications include DC-DC converters, power management in portable and battery-powered devices, and low voltage motor controls.

 

The device is Pb-Free, Halogen Free, and RoHS Compliant. It has a total power dissipation of 800 mW at 25°C ambient temperature (Note 1) and a thermal resistance of 155 °C/W (Junction-to-Ambient, Note 1).

NSS1C200MZ4T1G Quick Information

Product Type: PNP Transistor
Canonical Name: NSS1C200MZ4T1G PNP Low VCE(sat) Transistor
Subcategory: Single PNP

NSS1C200MZ4T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSS1C200MZ4T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSS1C200MZ4T1G Features

  • PNP transistor for switching applications.
  • 100V collector-emitter voltage rating.
  • 2A continuous collector current.
  • Low saturation voltage (220mV max).
  • SOT-223 surface mount package.

NSS1C200MZ4T1G Applications

  • Used in DC-DC converters.
  • Power management for portable devices.
  • Low voltage motor controls.
  • High speed switching circuits.

NSS1C200MZ4T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSS1C200MZ4T1G?

-100 Vdc

What is the continuous collector current rating?

2.0 A

What is the operating temperature range?

-55°C ~ 150°C

What package type is the NSS1C200MZ4T1G supplied in?

SOT-223

What is the saturation voltage at 2A collector current?

220mV

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