NSS1C200LT1G The On Semiconductor NSS1C200LT1G is a PNP bipolar transistor designed for low voltage, high speed switching applications. It features a 100V collector-emitter voltage and 2A continuous current capability.
Mfr Part #:

NSS1C200LT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSS1C200LT1G is a PNP bipolar transistor designed for low voltage, high speed switching applications. It features a 100V collector-emitter voltage and 2A continuous current capability.
Total Stock: 132,193 pcs
$ Price Range: $0.21

NSS1C200LT1G Available from 3 distributors

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7,020 pcs
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NSS1C200LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Junction and Storage Temperature Range
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TA = 25 °C, FR -4 @ 100 mm 2, 1 oz. copper traces)
Power Dissipation (Maximum @ TA = 25 °C, FR -4 @ 500 mm 2, 1 oz. copper traces)
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSS1C200LT1G Description

Short technical summary and product information.

The On Semiconductor NSS1C200LT1G is a PNP transistor from the e2PowerEdge family, designed for low voltage, high speed switching applications where efficient energy control is crucial. It offers a low VCE(sat) and high current gain capability.

 

Key electrical specifications include a maximum collector-emitter voltage of 100V and a continuous collector current of 2A. The device also features a DC current gain (hFE) of 120 minimum at 50mA and 2V, and a Vce saturation of 250mV maximum at 200mA and 2A. Its operating frequency reaches up to 120MHz.

 

This transistor is housed in a compact SOT-23-3 (TO-236) surface mount package, making it suitable for space-constrained designs. The operating temperature range is from -55°C to 150°C (TJ). It is specified with a total power dissipation of 490 mW at 25°C (FR-4 @ 100 mm2, 1 oz. copper traces).

 

Typical applications include DC-DC converters and power management in portable and battery-powered products such as cellular phones, PDAs, and digital cameras. It is also used in low voltage motor controls and automotive applications like airbag deployment.

NSS1C200LT1G Quick Information

Product Type: PNP Transistor
Series: NSS1C200LT1G
Canonical Name: PNP Transistor
Subcategory: Bipolar (BJT) - Single

NSS1C200LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSS1C200LT1G Estimated Pricing

Qty Low High
1+ $0.21 $0.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSS1C200LT1G Features

  • PNP transistor for low voltage switching.
  • 100V collector-emitter voltage rating.
  • 2A continuous collector current.
  • SOT-23-3 surface mount package.
  • Wide operating temperature range.

NSS1C200LT1G Applications

  • Used in DC-DC converters.
  • Power management in portable devices.
  • Low voltage motor controls.
  • Automotive applications.

NSS1C200LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSS1C200LT1G?

The maximum collector-emitter voltage is 100 Vdc.

What is the continuous collector current rating?

The continuous collector current is 2 A.

What is the package type for this transistor?

The transistor is supplied in a SOT-23-3 (TO-236) package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

Is the NSS1C200LT1G RoHS compliant?

The RoHS status is RoHS3 Compliant.

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